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CMU4435-VB Product details
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Product Introduction
CMU4435-VB is a high-performance single P-channel MOSFET with TO251 package and advanced Trench technology. The device has a high drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is -1.7V, and the on-resistance (RDS(ON)) is 22mΩ@VGS=4.5V and 18mΩ@VGS=10V at different gate voltages, which can provide a low impedance path to reduce power loss. The maximum drain current (ID) is -40A, suitable for high current applications.
CMU4435-VB is a high-performance single P-channel MOSFET with TO251 package and advanced Trench technology. The device has a high drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is -1.7V, and the on-resistance (RDS(ON)) is 22mΩ@VGS=4.5V and 18mΩ@VGS=10V at different gate voltages, which can provide a low impedance path to reduce power loss. The maximum drain current (ID) is -40A, suitable for high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -40A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -1.7V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
1. **Package type**: TO251
2. **Configuration**: Single P channel
3. **Drain-source voltage (VDS)**: -30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: -1.7V
6. **On-resistance (RDS(ON))**:
- 22mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
7. **Maximum drain current (ID)**: -40A
8. **Technology**: Trench
1. **Package type**: TO251
2. **Configuration**: Single P channel
3. **Drain-source voltage (VDS)**: -30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: -1.7V
6. **On-resistance (RDS(ON))**:
- 22mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
7. **Maximum drain current (ID)**: -40A
8. **Technology**: Trench
Domain and module applications：
Applications and Modules
The low on-resistance and high current capability of the CMU4435-VB MOSFET enable it to excel in multiple areas. Here are some specific application areas and modules for this product:
1. **Power Switch**: In switching power supplies and DC-DC converters, the CMU4435-VB can be used as a load switch, and its low on-resistance helps reduce power losses and improve energy efficiency. It is suitable for power conversion and management scenarios that require high current.
2. **Motor Drive**: This MOSFET is used to control current in motor drive modules, especially in electric power steering (EPS) and stepper motor drives, and can provide stable high-current switching control to ensure motor performance and responsiveness.
3. **Inverter**: In solar inverters and other power inverters, the CMU4435-VB can be used as a power switch to handle high current and high-efficiency conversion. Its high current carrying capacity and low on-resistance help improve the overall efficiency of the inverter.
4. **Automotive electronics**: In automotive electronic systems, this MOSFET is suitable for a variety of high current loads, such as power windows, power seats, and lighting systems. Its high current handling capability and low on-resistance help improve the performance and reliability of automotive electronic systems.
5. **Battery management**: CMU4435-VB can be used in battery management systems as a battery protection switch and a switch for battery balancing modules to ensure the safety and efficiency of batteries under high current operation.
Through these application examples, CMU4435-VB demonstrates excellent performance in high current and high power density applications, meeting the needs of a variety of industrial and consumer electronics products.
The low on-resistance and high current capability of the CMU4435-VB MOSFET enable it to excel in multiple areas. Here are some specific application areas and modules for this product:
1. **Power Switch**: In switching power supplies and DC-DC converters, the CMU4435-VB can be used as a load switch, and its low on-resistance helps reduce power losses and improve energy efficiency. It is suitable for power conversion and management scenarios that require high current.
2. **Motor Drive**: This MOSFET is used to control current in motor drive modules, especially in electric power steering (EPS) and stepper motor drives, and can provide stable high-current switching control to ensure motor performance and responsiveness.
3. **Inverter**: In solar inverters and other power inverters, the CMU4435-VB can be used as a power switch to handle high current and high-efficiency conversion. Its high current carrying capacity and low on-resistance help improve the overall efficiency of the inverter.
4. **Automotive electronics**: In automotive electronic systems, this MOSFET is suitable for a variety of high current loads, such as power windows, power seats, and lighting systems. Its high current handling capability and low on-resistance help improve the performance and reliability of automotive electronic systems.
5. **Battery management**: CMU4435-VB can be used in battery management systems as a battery protection switch and a switch for battery balancing modules to ensure the safety and efficiency of batteries under high current operation.
Through these application examples, CMU4435-VB demonstrates excellent performance in high current and high power density applications, meeting the needs of a variety of industrial and consumer electronics products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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