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CMU40NO3B-VB Product details
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CMU40NO3B-VB Product Introduction
CMU40NO3B-VB is a high-performance single N-channel power MOSFET in TO251 package. It has a drain-source voltage of 30V and a maximum drain current of 50A, and is designed for high current and high efficiency applications. The low on-resistance characteristics of this MOSFET (7mΩ at VGS=10V and 9mΩ at VGS=4.5V) make it excel in efficient energy transfer and reduced power consumption. CMU40NO3B-VB uses advanced Trench technology to provide stable performance under high load conditions, and has a threshold voltage of 1.7V to ensure good switching characteristics and reliable operation.
CMU40NO3B-VB is a high-performance single N-channel power MOSFET in TO251 package. It has a drain-source voltage of 30V and a maximum drain current of 50A, and is designed for high current and high efficiency applications. The low on-resistance characteristics of this MOSFET (7mΩ at VGS=10V and 9mΩ at VGS=4.5V) make it excel in efficient energy transfer and reduced power consumption. CMU40NO3B-VB uses advanced Trench technology to provide stable performance under high load conditions, and has a threshold voltage of 1.7V to ensure good switching characteristics and reliable operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: CMU40NO3B-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
- **Model**: CMU40NO3B-VB
- **Package**: TO251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The excellent performance of CMU40NO3B-VB makes it suitable for multiple fields and modules, especially in high current and high efficiency applications:
1. **Power management**:
- **Switching power supply (SMPS)**: The low on-resistance and high current capability of this MOSFET make it suitable for use in switching power supply systems, which can effectively improve energy conversion efficiency and reduce power consumption.
- **DC-DC converter**: In DC-DC converters, CMU40NO3B-VB can handle high currents, provide stable current support, and improve the overall efficiency and stability of the system.
2. **Industrial control**:
- **Motor drive**: Due to its ability to withstand high currents, CMU40NO3B-VB is very suitable for industrial motor drive systems to ensure efficient and stable operation of the motor.
- **Inverter**: In inverter applications, this MOSFET can withstand high current loads and provide reliable current control and conversion.
3. **Automotive electronics**:
- **Electric vehicles**: In electric vehicles, the CMU40NO3B-VB can be used for motor control and battery management systems, improving the performance and efficiency of electric vehicles through its low on-resistance and high current capability.
- **Automotive power distribution**: In automotive power systems, this MOSFET can efficiently manage current flow and ensure the reliability and stability of the power system.
Through these application areas and module examples, we can see the importance and wide applicability of the CMU40NO3B-VB in various high-current and efficient energy transmission systems.
The excellent performance of CMU40NO3B-VB makes it suitable for multiple fields and modules, especially in high current and high efficiency applications:
1. **Power management**:
- **Switching power supply (SMPS)**: The low on-resistance and high current capability of this MOSFET make it suitable for use in switching power supply systems, which can effectively improve energy conversion efficiency and reduce power consumption.
- **DC-DC converter**: In DC-DC converters, CMU40NO3B-VB can handle high currents, provide stable current support, and improve the overall efficiency and stability of the system.
2. **Industrial control**:
- **Motor drive**: Due to its ability to withstand high currents, CMU40NO3B-VB is very suitable for industrial motor drive systems to ensure efficient and stable operation of the motor.
- **Inverter**: In inverter applications, this MOSFET can withstand high current loads and provide reliable current control and conversion.
3. **Automotive electronics**:
- **Electric vehicles**: In electric vehicles, the CMU40NO3B-VB can be used for motor control and battery management systems, improving the performance and efficiency of electric vehicles through its low on-resistance and high current capability.
- **Automotive power distribution**: In automotive power systems, this MOSFET can efficiently manage current flow and ensure the reliability and stability of the power system.
Through these application areas and module examples, we can see the importance and wide applicability of the CMU40NO3B-VB in various high-current and efficient energy transmission systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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