CMU30N06L-VB Product details
Product introduction:
CMU30N06L-VB is a single N-channel MOSFET in TO251 package, designed for high-efficiency low-voltage applications. Its main features include a drain-source breakdown voltage of up to 60V and a continuous drain current of 35A, suitable for handling medium and high current loads. The MOSFET adopts Trench technology to ensure low on-resistance (RDS(ON)), thereby improving switching efficiency and reducing power losses. Its low threshold voltage and wide gate-source voltage range enable it to perform well in various power management and switch control applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 1.7V | 35A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 1.7V | 35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 1.7V | 35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| Parameter| Description|
|------|------|
| Package| TO251 |
| Configuration| Single N-channel|
| Drain-source breakdown voltage (VDS) | 60V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 37mΩ @ VGS=4.5V
32mΩ @ VGS=10V |
| Continuous drain current (ID) | 35A |
| Technology| Trench |
Domain and module applications:
Due to its good performance and wide applicability, CMU30N06L-VB MOSFET is suitable for the following main fields and modules:
1. **Switching power supply**: In switching power supply (SMPS) applications, CMU30N06L-VB MOSFET acts as the main switching device to provide efficient power conversion. Its low on-resistance and high current handling capability enable it to reduce energy loss during the conversion process and improve overall system efficiency.
2. **DC-DC converter**: This MOSFET is suitable for use in DC-DC converters for efficient voltage conversion. Its low on-resistance helps reduce power loss and improve conversion efficiency, especially in application scenarios that need to handle larger currents.
3. **Motor drive**: In motor drive applications, CMU30N06L-VB is able to handle high current loads and provide reliable switching control. Its high current capability and low on-resistance help improve the operating efficiency and stability of the motor, and is suitable for various motor drive modules.
4. **LED lighting**: In LED lighting systems, this MOSFET can be used as a switch control device to provide efficient current management and switching operations. Its low on-resistance and high current capability make it suitable for high-power LED drive circuits to ensure stable and efficient light sources.
5. **Battery management system**: In battery management systems, CMU30N06L-VB MOSFET can efficiently manage the charging and discharging process of the battery. Its high current handling capability and low on-resistance help improve the efficiency of battery management, reduce energy loss, and extend battery life.
In summary, with its excellent electrical characteristics, CMU30N06L-VB MOSFET is suitable for various types of high-efficiency power management and switch control applications, and can meet the needs of medium and high current loads.
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