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CMU2N65D-VB Product details
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CMU2N65D-VB MOSFET Product Introduction
CMU2N65D-VB is a single N-channel power MOSFET packaged in TO251. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. The threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 4300mΩ, and the maximum drain current (ID) is 2A when VGS=10V. This MOSFET uses planar process technology, which is suitable for high voltage applications but provides higher on-resistance. It is mainly used in low current, high voltage switching applications.
CMU2N65D-VB is a single N-channel power MOSFET packaged in TO251. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. The threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 4300mΩ, and the maximum drain current (ID) is 2A when VGS=10V. This MOSFET uses planar process technology, which is suitable for high voltage applications but provides higher on-resistance. It is mainly used in low current, high voltage switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
| Parameter| Value| Unit|
|------------------|----------------------------|-------------|
| Package type| TO251 | - |
| Configuration| Single N-channel| - |
| Drain-source voltage (VDS) | 650 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Threshold voltage (Vth) | 3.5 | V |
| On-resistance (RDS(ON)) | 4300 | mΩ |
| Drain current (ID) | 2 | A |
| Technology| Planar| - |
| Parameter| Value| Unit|
|------------------|----------------------------|-------------|
| Package type| TO251 | - |
| Configuration| Single N-channel| - |
| Drain-source voltage (VDS) | 650 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Threshold voltage (Vth) | 3.5 | V |
| On-resistance (RDS(ON)) | 4300 | mΩ |
| Drain current (ID) | 2 | A |
| Technology| Planar| - |
Domain and module applications：
Application fields and modules
The high withstand voltage characteristics and low current capability of CMU2N65D-VB MOSFET make it suitable for the following fields and modules:
1. **High-voltage switching power supply**: Due to its high withstand voltage (650V), CMU2N65D-VB is suitable for power management applications that require high-voltage switching, such as high-voltage switch mode power supplies (SMPS) and power adapters.
2. **Low-power motor drive**: This MOSFET can be used in low-power motor drive systems to provide stable current control, suitable for motor control in home appliances and small power tools.
3. **High-voltage protection circuit**: In high-voltage protection and overvoltage protection circuits, CMU2N65D-VB can effectively control high voltage and protect the system from overvoltage damage.
4. **Lighting system**: Suitable for high-voltage lighting applications, such as switch control in high-voltage gas discharge lamps, to ensure stable operation of lamps in high-voltage environments.
5. **Energy Management System**: In energy conversion and management systems, such as switching control of high-voltage DC power supplies, CMU2N65D-VB provides high withstand voltage and good switching performance.
These application examples demonstrate the applicability and advantages of CMU2N65D-VB MOSFET in high-voltage, low-current scenarios.
The high withstand voltage characteristics and low current capability of CMU2N65D-VB MOSFET make it suitable for the following fields and modules:
1. **High-voltage switching power supply**: Due to its high withstand voltage (650V), CMU2N65D-VB is suitable for power management applications that require high-voltage switching, such as high-voltage switch mode power supplies (SMPS) and power adapters.
2. **Low-power motor drive**: This MOSFET can be used in low-power motor drive systems to provide stable current control, suitable for motor control in home appliances and small power tools.
3. **High-voltage protection circuit**: In high-voltage protection and overvoltage protection circuits, CMU2N65D-VB can effectively control high voltage and protect the system from overvoltage damage.
4. **Lighting system**: Suitable for high-voltage lighting applications, such as switch control in high-voltage gas discharge lamps, to ensure stable operation of lamps in high-voltage environments.
5. **Energy Management System**: In energy conversion and management systems, such as switching control of high-voltage DC power supplies, CMU2N65D-VB provides high withstand voltage and good switching performance.
These application examples demonstrate the applicability and advantages of CMU2N65D-VB MOSFET in high-voltage, low-current scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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