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CMU12P10S-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**CMU12P10S-VB** is a high-performance single P-channel MOSFET that uses Trench technology and has excellent current handling capability and low on-resistance. The device uses a TO251 package, which provides good heat dissipation and electrical characteristics. Its main specifications include a maximum drain-source voltage of -100V, a gate drive voltage of ±20V, and a threshold voltage of -2V. The on-resistance (RDS(ON)) is 234mΩ at VGS=4.5V and 215mΩ at VGS=10V, and the maximum continuous drain current is -12A. These characteristics make it suitable for switching and regulation functions in a variety of high-voltage and high-current applications.
**CMU12P10S-VB** is a high-performance single P-channel MOSFET that uses Trench technology and has excellent current handling capability and low on-resistance. The device uses a TO251 package, which provides good heat dissipation and electrical characteristics. Its main specifications include a maximum drain-source voltage of -100V, a gate drive voltage of ±20V, and a threshold voltage of -2V. The on-resistance (RDS(ON)) is 234mΩ at VGS=4.5V and 215mΩ at VGS=10V, and the maximum continuous drain current is -12A. These characteristics make it suitable for switching and regulation functions in a variety of high-voltage and high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -12A | 215mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -100V | -2V | -12A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
II. Detailed parameter description
| Parameter name| Parameter value|
|------------------|------------------------|
| Package type| TO251 |
| Configuration| Single P-channel|
| Drain-source voltage (VDS) | -100V |
| Gate drive voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -2V |
| On-resistance (RDS(ON)) | 234mΩ @ VGS=4.5V |
| | 215mΩ @ VGS=10V |
| Continuous drain current (ID) | -12A |
| Technology| Trench |
| Parameter name| Parameter value|
|------------------|------------------------|
| Package type| TO251 |
| Configuration| Single P-channel|
| Drain-source voltage (VDS) | -100V |
| Gate drive voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -2V |
| On-resistance (RDS(ON)) | 234mΩ @ VGS=4.5V |
| | 215mΩ @ VGS=10V |
| Continuous drain current (ID) | -12A |
| Technology| Trench |
Domain and module applications：
III. Application fields and module examples
**CMU12P10S-VB** MOSFET is suitable for the following fields and modules due to its high voltage and high current capabilities, as well as low on-resistance:
1. **Switching Power Supply (SMPS)**
- As an efficient switching device in the switching power supply module, it manages the conversion of high voltage and current, optimizes power conversion efficiency, and reduces energy loss.
2. **Load Switch**
- Used in high-voltage load switching applications, such as high-current load switches in power management systems, to ensure stable power switching and load control.
3. **Electric Vehicles and Hybrid Vehicles**
- In the battery management system of electric vehicles and hybrid vehicles, it controls the charging and discharging process of high-voltage battery packs to improve the reliability and efficiency of power management.
4. **DC-DC Converter**
- Used as the main switch in the high-voltage DC-DC converter to regulate the conversion between input voltage and output voltage and provide stable power output.
5. **Power Management and Protection Circuit**
- As a key switching device in the power management and overcurrent protection circuit, it prevents damage from overcurrent and overvoltage and improves the safety and stability of the circuit.
**CMU12P10S-VB** MOSFET is suitable for providing stable and reliable switching and regulation functions in high current and high voltage applications due to its excellent high voltage handling capability and low on-resistance.
**CMU12P10S-VB** MOSFET is suitable for the following fields and modules due to its high voltage and high current capabilities, as well as low on-resistance:
1. **Switching Power Supply (SMPS)**
- As an efficient switching device in the switching power supply module, it manages the conversion of high voltage and current, optimizes power conversion efficiency, and reduces energy loss.
2. **Load Switch**
- Used in high-voltage load switching applications, such as high-current load switches in power management systems, to ensure stable power switching and load control.
3. **Electric Vehicles and Hybrid Vehicles**
- In the battery management system of electric vehicles and hybrid vehicles, it controls the charging and discharging process of high-voltage battery packs to improve the reliability and efficiency of power management.
4. **DC-DC Converter**
- Used as the main switch in the high-voltage DC-DC converter to regulate the conversion between input voltage and output voltage and provide stable power output.
5. **Power Management and Protection Circuit**
- As a key switching device in the power management and overcurrent protection circuit, it prevents damage from overcurrent and overvoltage and improves the safety and stability of the circuit.
**CMU12P10S-VB** MOSFET is suitable for providing stable and reliable switching and regulation functions in high current and high voltage applications due to its excellent high voltage handling capability and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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