CMU04NO3-VB Product details
Product introduction:
**CMU04NO3-VB** is a high-performance N-channel MOSFET in TO251 package. Its design combines advanced Trench technology to provide excellent electrical performance and efficient power management. With a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, this MOSFET can operate stably at a drain current (ID) of up to 100A. Its on-resistance is 4.5mΩ at VGS=4.5V and 3.5mΩ at VGS=10V, ensuring low power consumption and high-efficiency switching performance. This MOSFET is widely used in applications requiring high current and low on-resistance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
1. **Basic parameters**
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Technology**: Trench
2. **Electrical parameters**
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4.5mΩ@VGS=4.5V
- 3.5mΩ@VGS=10V
- **Drain current (ID)**: 100A
3. **Thermal parameters**
- **Junction temperature range (Tj)**: -55°C to +150°C
- **Thermal resistance (junction to case) (RθJC)**: typical 0.8°C/W
4. **Dynamic parameters**
- **Input capacitance (Ciss)**: 3500pF
- **Output capacitance (Coss)**: 1100pF
- **Reverse transfer capacitance (Crss)**: 60pF
Domain and module applications:
**CMU04NO3-VB**'s high current carrying capacity and low on-resistance make it widely used in many fields. Here are some specific application examples:
1. **High-power power management**
- In high-power power management systems, such as server power supplies and industrial power supplies, this MOSFET can be used for efficient power conversion and switching operations. Its low on-resistance ensures high efficiency and low power consumption of the system.
2. **Electric Vehicles (EV)**
- In the drive system of electric vehicles, this MOSFET can be used for motor control and battery management. Its high current carrying capacity can cope with the demand for high power current in electric vehicles and provide stable power conversion.
3. **Motor drive**
- In motor drive applications, such as industrial machinery and household appliances, this MOSFET can be used as a drive switch for the motor. Its low on-resistance and high current capability ensure efficient and reliable operation of the motor.
4. **DC-DC Converter**
- In a DC-DC converter, this MOSFET can be used as a switching element to achieve efficient voltage conversion and regulation. Its low on-resistance and high current handling capability make it suitable for a variety of high-efficiency power conversion applications.
In summary, **CMU04NO3-VB** performs well in applications that require high current, high efficiency, and low power consumption, and is suitable for use in a variety of fields such as high-power power supplies, automotive power systems, motor control, and DC-DC converters.
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