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CMT20N50-VB Product details
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CMT20N50-VB MOSFET Product Introduction
CMT20N50-VB is a single N-channel power MOSFET packaged as TO3P. It has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of up to 30V. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 190mΩ at VGS=10V, and the maximum continuous drain current (ID) is 20A. This MOSFET adopts SJ_Multi-EPI technology, providing excellent high-voltage operation and efficient switching performance, suitable for various high-voltage power supplies and control systems.
CMT20N50-VB is a single N-channel power MOSFET packaged as TO3P. It has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of up to 30V. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 190mΩ at VGS=10V, and the maximum continuous drain current (ID) is 20A. This MOSFET adopts SJ_Multi-EPI technology, providing excellent high-voltage operation and efficient switching performance, suitable for various high-voltage power supplies and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Detailed parameter description
| Parameter| Value| Unit|
|------------------|----------------------------|-------------|
| Package type| TO3P | - |
| Configuration| Single N-channel| - |
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Threshold voltage (Vth) | 3.5 | V |
| On-resistance (RDS(ON)) | 190 | mΩ |
| Drain current (ID) | 20 | A |
| Technology| SJ_Multi-EPI | - |
| Parameter| Value| Unit|
|------------------|----------------------------|-------------|
| Package type| TO3P | - |
| Configuration| Single N-channel| - |
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Threshold voltage (Vth) | 3.5 | V |
| On-resistance (RDS(ON)) | 190 | mΩ |
| Drain current (ID) | 20 | A |
| Technology| SJ_Multi-EPI | - |
Domain and module applications：
Applications and modules
The high withstand voltage and good electrical performance of CMT20N50-VB MOSFET make it suitable for a variety of high-voltage applications, including but not limited to the following modules and fields:
1. **Power management**: In high-voltage power converters and switch mode power supplies (SMPS), CMT20N50-VB can handle high voltage and high current, provide stable power conversion efficiency, and is suitable for industrial power supplies and power adapters.
2. **Motor control**: This MOSFET can effectively control current in high-voltage motor drive systems, suitable for power tools, household appliance motor drives, and industrial motor control systems.
3. **Welding equipment**: CMT20N50-VB is suitable for use in high-voltage arc welding equipment, and can provide stable current control and efficient switching performance during welding.
4. **Energy conversion**: In high-voltage solar inverters and wind power generation systems, CMT20N50-VB can be used for power conversion and high-voltage current control to improve the energy efficiency and reliability of the system.
5. **Lighting system**: This MOSFET is suitable for high-voltage lighting systems, such as high-voltage gas discharge lamps and LED driver power supplies, to ensure stable operation of lamps in high-voltage environments.
These application areas demonstrate the advantages of CMT20N50-VB in high-voltage and high-current control, making it an important component in high-efficiency electronic devices.
The high withstand voltage and good electrical performance of CMT20N50-VB MOSFET make it suitable for a variety of high-voltage applications, including but not limited to the following modules and fields:
1. **Power management**: In high-voltage power converters and switch mode power supplies (SMPS), CMT20N50-VB can handle high voltage and high current, provide stable power conversion efficiency, and is suitable for industrial power supplies and power adapters.
2. **Motor control**: This MOSFET can effectively control current in high-voltage motor drive systems, suitable for power tools, household appliance motor drives, and industrial motor control systems.
3. **Welding equipment**: CMT20N50-VB is suitable for use in high-voltage arc welding equipment, and can provide stable current control and efficient switching performance during welding.
4. **Energy conversion**: In high-voltage solar inverters and wind power generation systems, CMT20N50-VB can be used for power conversion and high-voltage current control to improve the energy efficiency and reliability of the system.
5. **Lighting system**: This MOSFET is suitable for high-voltage lighting systems, such as high-voltage gas discharge lamps and LED driver power supplies, to ensure stable operation of lamps in high-voltage environments.
These application areas demonstrate the advantages of CMT20N50-VB in high-voltage and high-current control, making it an important component in high-efficiency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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