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CMT14N50N3P-VB Product details
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1. Product Introduction
**CMT14N50N3P-VB** is a high-performance single N-channel MOSFET that uses advanced SJ_Multi-EPI technology to provide excellent conduction performance and voltage resistance characteristics. It uses a TO3P package, has excellent thermal performance and high current handling capabilities, and is suitable for high-voltage application environments. The device has a breakdown voltage (VDS) of 600V and a gate drive voltage (VGS) of 30V, a maximum continuous drain current of 15A, and an on-resistance (RDS(ON)) of 280mΩ (at VGS=10V).
**CMT14N50N3P-VB** is a high-performance single N-channel MOSFET that uses advanced SJ_Multi-EPI technology to provide excellent conduction performance and voltage resistance characteristics. It uses a TO3P package, has excellent thermal performance and high current handling capabilities, and is suitable for high-voltage application environments. The device has a breakdown voltage (VDS) of 600V and a gate drive voltage (VGS) of 30V, a maximum continuous drain current of 15A, and an on-resistance (RDS(ON)) of 280mΩ (at VGS=10V).
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
II. Detailed parameter description
| Parameter name| Parameter value|
|------------------|---------------------|
| Package type| TO3P |
| Configuration| Single N-channel|
| Breakdown voltage (VDS) | 600V |
| Gate drive voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 280mΩ @ VGS=10V |
| Continuous drain current (ID) | 15A |
| Technology| SJ_Multi-EPI |
| Parameter name| Parameter value|
|------------------|---------------------|
| Package type| TO3P |
| Configuration| Single N-channel|
| Breakdown voltage (VDS) | 600V |
| Gate drive voltage (VGS) | ±30V |
| Threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 280mΩ @ VGS=10V |
| Continuous drain current (ID) | 15A |
| Technology| SJ_Multi-EPI |
Domain and module applications：
3. Application fields and module examples
**CMT14N50N3P-VB** MOSFET is widely used in various high-voltage power supplies and converters. The following are some typical application fields and module examples:
1. **Industrial power converter**
- Used in high-voltage DC (HVDC) converters and high-frequency switching power converters to provide efficient power conversion and reduce power consumption and heat loss.
2. **Electric vehicles and hybrid vehicles**
- In high-voltage battery management systems and motor drive modules in electric vehicles and hybrid vehicles, it is used to control and manage power flow and improve energy efficiency and performance.
3. **Solar inverter**
- Inverter modules used in solar power generation systems to convert DC power into AC power and provide efficient and reliable power output.
4. **Motor drive control**
- In industrial and household motor drive systems, it provides high-voltage power control and regulation to ensure stable operation and efficient performance of the motor.
5. **Uninterruptible Power Supply (UPS)**
- Used for high voltage conversion and power management in uninterruptible power supply systems to ensure the stability and reliability of power supply.
**CMT14N50N3P-VB** MOSFET, with its high voltage and high current handling capabilities, is an ideal choice for these high voltage applications, providing an efficient and reliable power conversion and control solution.
**CMT14N50N3P-VB** MOSFET is widely used in various high-voltage power supplies and converters. The following are some typical application fields and module examples:
1. **Industrial power converter**
- Used in high-voltage DC (HVDC) converters and high-frequency switching power converters to provide efficient power conversion and reduce power consumption and heat loss.
2. **Electric vehicles and hybrid vehicles**
- In high-voltage battery management systems and motor drive modules in electric vehicles and hybrid vehicles, it is used to control and manage power flow and improve energy efficiency and performance.
3. **Solar inverter**
- Inverter modules used in solar power generation systems to convert DC power into AC power and provide efficient and reliable power output.
4. **Motor drive control**
- In industrial and household motor drive systems, it provides high-voltage power control and regulation to ensure stable operation and efficient performance of the motor.
5. **Uninterruptible Power Supply (UPS)**
- Used for high voltage conversion and power management in uninterruptible power supply systems to ensure the stability and reliability of power supply.
**CMT14N50N3P-VB** MOSFET, with its high voltage and high current handling capabilities, is an ideal choice for these high voltage applications, providing an efficient and reliable power conversion and control solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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