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CMT02N60GN251-VB Product details
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CMT02N60GN251-VB Product Introduction
CMT02N60GN251-VB is a high-voltage single-channel N-type MOSFET with a TO251 package type. It uses the Plannar process and has a drain-source breakdown voltage of up to 650V and a maximum drain current of 2A. With an on-resistance of 4300mΩ at a gate-source voltage of 10V, this MOSFET is suitable for applications requiring high-voltage operation and medium current control. Designed to meet the needs of reliable switching in high-voltage environments, the CMT02N60GN251-VB is ideal for high-voltage power supplies and electrical control systems.
CMT02N60GN251-VB is a high-voltage single-channel N-type MOSFET with a TO251 package type. It uses the Plannar process and has a drain-source breakdown voltage of up to 650V and a maximum drain current of 2A. With an on-resistance of 4300mΩ at a gate-source voltage of 10V, this MOSFET is suitable for applications requiring high-voltage operation and medium current control. Designed to meet the needs of reliable switching in high-voltage environments, the CMT02N60GN251-VB is ideal for high-voltage power supplies and electrical control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
1. **Package type**
- TO251
2. **Configuration**
- Single-N-Channel
3. **Drain-source voltage(VDS)**
- 650V
4. **Gate-source voltage(VGS)**
- ±30V
5. **Threshold voltage(Vth)**
- 3.5V
6. **On-resistance(RDS(ON))**
- 4300mΩ @ VGS=10V
7. **Maximum continuous drain current(ID)**
- 2A
8. **Technology**
- Plannar
1. **Package type**
- TO251
2. **Configuration**
- Single-N-Channel
3. **Drain-source voltage(VDS)**
- 650V
4. **Gate-source voltage(VGS)**
- ±30V
5. **Threshold voltage(Vth)**
- 3.5V
6. **On-resistance(RDS(ON))**
- 4300mΩ @ VGS=10V
7. **Maximum continuous drain current(ID)**
- 2A
8. **Technology**
- Plannar
Domain and module applications：
Applications and modules
CMT02N60GN251-VB MOSFET is suitable for various applications requiring high voltage and medium current due to its high voltage capability and stable performance. Here are some typical application areas:
1. **High Voltage Power Supplies**
- In high voltage power supply modules, CMT02N60GN251-VB can be used as a switching element for power conversion and management in high voltage environments. Its high drain-source breakdown voltage enables it to operate safely under high voltage conditions.
2. **Power Protection**
- This MOSFET can be used in power protection circuits, such as overvoltage protection and short-circuit protection. Its high withstand voltage and stable performance can effectively protect the circuit from high voltage shocks.
3. **Motor Drives**
- In motor drive applications, especially high voltage drive systems, CMT02N60GN251-VB can provide reliable switching control to ensure stable operation of the motor under high voltage conditions.
4. **Inverters**
- In inverters, such as solar inverters and other high voltage inverter systems, CMT02N60GN251-VB as a switching element can effectively control the conversion of electrical energy and improve the efficiency and reliability of the system.
5. **Industrial Electrical Control**
- This MOSFET is suitable for various industrial electrical control systems, such as power control panels and high voltage switch systems. Its high voltage and current handling capabilities ensure the stability and safety of the system.
The high voltage capability and stable performance of CMT02N60GN251-VB enable it to excel in applications requiring high voltage switching and control, providing a reliable solution for a variety of high voltage electronic systems.
CMT02N60GN251-VB MOSFET is suitable for various applications requiring high voltage and medium current due to its high voltage capability and stable performance. Here are some typical application areas:
1. **High Voltage Power Supplies**
- In high voltage power supply modules, CMT02N60GN251-VB can be used as a switching element for power conversion and management in high voltage environments. Its high drain-source breakdown voltage enables it to operate safely under high voltage conditions.
2. **Power Protection**
- This MOSFET can be used in power protection circuits, such as overvoltage protection and short-circuit protection. Its high withstand voltage and stable performance can effectively protect the circuit from high voltage shocks.
3. **Motor Drives**
- In motor drive applications, especially high voltage drive systems, CMT02N60GN251-VB can provide reliable switching control to ensure stable operation of the motor under high voltage conditions.
4. **Inverters**
- In inverters, such as solar inverters and other high voltage inverter systems, CMT02N60GN251-VB as a switching element can effectively control the conversion of electrical energy and improve the efficiency and reliability of the system.
5. **Industrial Electrical Control**
- This MOSFET is suitable for various industrial electrical control systems, such as power control panels and high voltage switch systems. Its high voltage and current handling capabilities ensure the stability and safety of the system.
The high voltage capability and stable performance of CMT02N60GN251-VB enable it to excel in applications requiring high voltage switching and control, providing a reliable solution for a variety of high voltage electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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