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CMN3400-VB Product details
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CMN3400-VB MOSFET Product Introduction
CMN3400-VB is a high-efficiency single N-channel MOSFET in SOT23-3 package, suitable for low voltage, high switching speed applications. Designed for high-efficiency power management and switching operation, this MOSFET uses Trench technology to provide excellent current handling capability and low on-resistance. This makes it excel in a variety of electronic devices, especially in situations where high performance and compact design are required.
CMN3400-VB is a high-efficiency single N-channel MOSFET in SOT23-3 package, suitable for low voltage, high switching speed applications. Designed for high-efficiency power management and switching operation, this MOSFET uses Trench technology to provide excellent current handling capability and low on-resistance. This makes it excel in a variety of electronic devices, especially in situations where high performance and compact design are required.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 30V | 1.7V | 6.5A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 30V | 1.7V | 6.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 30V | 1.7V | 6.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
CMN3400-VB MOSFET Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 33mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 6.5A
- **Technology**: Trench
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 33mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 6.5A
- **Technology**: Trench
Domain and module applications：
### CMN3400-VB MOSFET Applications and Modules
#### Power Management
The CMN3400-VB is ideal for power management applications, especially DC-DC converters and power switches. Its low RDS(ON) value ensures efficient power transfer and low power consumption, making it excellent in high-frequency switching operations.
#### Small Electronic Devices
Due to its compact SOT23-3 package, the CMN3400-VB is suitable for space-constrained electronic devices such as smartphones, portable devices and consumer electronics. In these devices, its high switching speed and low on-resistance help improve the overall performance and battery life of the system.
#### Switching Power Supplies
In low-voltage switching power supply applications, the CMN3400-VB provides efficient switching performance. Its low on-resistance and high drain current handling capabilities make it suitable for efficient power conversion and load switching, improving the efficiency and stability of the power supply.
#### Motor Drive
CMN3400-VB can also be used in low-voltage motor drive applications. In motor drive systems, its high switching efficiency and low power consumption characteristics help improve the efficiency and reliability of motor operation, especially in applications that require high switching frequency and low power consumption.
In summary, the low voltage, high switching efficiency and compact package of CMN3400-VB MOSFET make it excel in applications such as power management, small electronic devices, switching power supplies and motor drives. Its Trench technology ensures efficient current handling capability and stable performance, suitable for modern electronic products and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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