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CMN2302M-VB Product details

Product introduction:

CMN2302M-VB MOSFET Product Introduction



**CMN2302M-VB** is a small N-Channel MOSFET in a SOT23-3 package designed for low voltage applications. It uses Trench technology to support drain-source voltage (VDS) up to 20V and gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is between 0.5V and 1.5V, and it has an on-resistance (RDS(ON)) of 25mΩ at a gate-source voltage of 2.5V, an RDS(ON) of 20mΩ at a gate-source voltage of 4.5V, and a maximum drain current (ID) of 6A. It is designed for low voltage circuits that require small packages and low on-resistance.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 20V 20(±V) 0.5~1.5V 6A 25mΩ
CMN2302M-VB MOSFET Detailed parameter description



- **Package**: SOT23-3

- **Configuration**: Single N-Channel

- **Drain-source voltage (VDS)**: 20V

- **Gate-source voltage (VGS)**: ±20V

- **Threshold voltage (Vth)**: 0.5V ~ 1.5V

- **RDS(ON)**:

- 25mΩ @ VGS = 2.5V

- 20mΩ @ VGS = 4.5V

- **Maximum drain current (ID)**: 6A

- **Technology**: Trench



Domain and module applications:

Application Examples of CMN2302M-VB MOSFET



1. **Small Power Switch**:

- In small power switch applications, the CMN2302M-VB MOSFET can be used for switching control of power management circuits. Its low on-resistance and small package make it suitable for power switches in portable devices and small electronic products.



2. **Low Voltage DC-DC Converter**:

- In low voltage DC-DC converters, this MOSFET can be used to switch and regulate the power conversion process. Its efficient switching performance and low on-resistance can improve the efficiency of the converter, reduce power consumption and heat.



3. **Portable Electronic Devices**:

- In portable electronic devices (such as smartphones, tablets), the CMN2302M-VB can be used for power management and load switching. Its small SOT23-3 package is suitable for devices with limited space, and its low on-resistance helps improve the energy efficiency of the device.



4. **LED drive circuit**:

- In LED drive circuits, this MOSFET can be used to switch and adjust the brightness of LEDs. Its low on-resistance and high current capability enable it to efficiently drive LEDs and provide stable brightness control.



5. **Low-power circuit protection**:

- In low-power circuit protection applications, the CMN2302M-VB can be used for overcurrent protection and circuit isolation. Its efficient switching capability and low on-resistance help improve circuit reliability and safety.



The design of the CMN2302M-VB MOSFET enables it to excel in low-voltage applications, providing efficient switching performance and low power consumption. Its small package and high current capability make it suitable for a variety of compact electronic devices and efficient power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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