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CMH25N50-VB Product details

Product introduction:

CMH25N50-VB MOSFET Product Introduction



**CMH25N50-VB** is a high-voltage N-Channel MOSFET in a TO247 package designed for high-voltage applications. Utilizing SJ_Multi-EPI technology, the device is capable of handling drain-source voltages (VDS) up to 500V and gate-source voltages (VGS) of ±30V. Its threshold voltage (Vth) is 3.8V, and it provides an on-resistance (RDS(ON)) of 80mΩ at a gate-source voltage of 10V, capable of supporting a maximum drain current (ID) of up to 40A. These features make the CMH25N50-VB an ideal choice for high-voltage applications requiring high efficiency and reliability.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 500V 3.8V 40A 80mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
CMH25N50-VB MOSFET Detailed parameter description



- **Package**: TO247

- **Configuration**: Single N-Channel

- **Drain-Source Voltage (VDS)**: 500V

- **Gate-Source Voltage (VGS)**: ±30V

- **Threshold Voltage (Vth)**: 3.8V

- **RDS(ON)**: 80mΩ @ VGS = 10V

- **Maximum Drain Current (ID)**: 40A

- **Technology**: SJ_Multi-EPI



Domain and module applications:

Application Examples of CMH25N50-VB MOSFET



1. **High Voltage Power Conversion**:

- In high voltage power conversion systems, the CMH25N50-VB MOSFET can be used for switching operations in converters and inverters. Its high drain-source voltage capability and low on-resistance characteristics enable it to efficiently manage high voltage power, thereby improving the overall efficiency and performance of the system.



2. **Industrial Motor Drive**:

- In industrial motor drive applications, this MOSFET can be used in high voltage motor control circuits. The high current and high voltage handling capabilities of the CMH25N50-VB enable it to provide reliable switching functions in high power motor drives, improving the stability and efficiency of the motor drive system.



3. **Solar Inverter**:

- In solar power generation systems, the CMH25N50-VB can be used in the high voltage section of the solar inverter. Its high voltage withstand capability and low on-resistance characteristics help achieve efficient DC to AC conversion, thereby improving the overall efficiency of the solar system.



4. **Uninterruptible Power Supply (UPS)**:

- In uninterruptible power supply systems, this MOSFET can be used for high-voltage battery management and inverter circuits. The high withstand voltage and high current capability of the CMH25N50-VB enables it to provide reliable power conversion and management in UPS systems, ensuring stable power supply during power outages.



5. **High-voltage Lighting Systems**:

- In high-voltage lighting control systems, this MOSFET can be used to regulate and control high-voltage lighting loads. Its high voltage handling capability and low on-resistance characteristics make it suitable for efficient and reliable lighting control systems, extending the life of lighting equipment and improving energy efficiency.



The design of the CMH25N50-VB MOSFET enables it to perform well in high-voltage applications, providing stable and efficient switching operations. Through its SJ_Multi-EPI technology and high voltage handling capability, this MOSFET can meet the needs of a variety of high-voltage electronic devices and support efficient and reliable power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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