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CMH20N50-VB Product details

Product introduction:

1. Product introduction of CMH20N50-VB model



CMH20N50-VB is a high-performance single N-channel power MOSFET in TO247 package. This MOSFET has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±30V, and adopts advanced SJ_Multi-EPI technology. Its gate threshold voltage (Vth) is 3.8V, the on-resistance (RDS(ON)) is 80mΩ at VGS=10V, and the maximum drain current (ID) is 40A. CMH20N50-VB is designed for high-voltage and high-current switching applications, providing excellent voltage resistance and conduction performance, and is suitable for application scenarios requiring high voltage and high power handling.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 500V 3.8V 40A 80mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
II. Detailed parameter description of CMH20N50-VB model



| Parameter| Value| Unit|

| ---------- | ------------------ | ------- |

| Package| TO247 | |

| Configuration| Single N-channel| |

| Drain-source voltage (VDS) | 500 | V |

| Gate-source voltage (VGS) | ±30 | V |

| Gate threshold voltage (Vth) | 3.8 | V |

| On-resistance (RDS(ON)) @VGS=10V | 80 | mΩ |

| Drain current (ID) | 40 | A |

| Technology| SJ_Multi-EPI | |



Domain and module applications:

3. Application fields and modules of CMH20N50-VB



The high voltage and high current handling capabilities of CMH20N50-VB make it widely used in multiple fields and modules:



1. **High voltage power switch**: In high voltage power management systems, CMH20N50-VB is suitable for use as a high voltage switch, such as in high voltage DC-DC converters, where it can handle high voltage and high power switching tasks, ensuring the stability and efficiency of the power system.



2. **Inverter application**: In inverters and other high voltage power conversion equipment, the 500V withstand voltage capability and low on-resistance of this MOSFET make it suitable for high-efficiency power conversion, improving the overall efficiency and stability of the inverter.



3. **Power electronic equipment**: In power electronic equipment such as high power power supplies and motor drive control systems, CMH20N50-VB provides high voltage and high current handling capabilities, which can effectively handle high power switching tasks and enhance the reliability and performance of the system.



4. **Battery Management System**: In high voltage battery management systems, this MOSFET can be used for battery protection and current control, handling high voltage and high current, ensuring safe and efficient operation of the battery pack.



5. **Industrial Application**: In industrial automation and control systems, CMH20N50-VB can be used for high voltage switching and control tasks, such as motor drive and high power load switching, providing stable and efficient switching solutions.



6. **High Power Load Switch**: In load switch applications that need to handle high voltage and high current, CMH20N50-VB provides excellent switching performance and high voltage tolerance, suitable for various high power load control.



With its high voltage tolerance and excellent conduction performance, CMH20N50-VB is an ideal choice for handling high voltage and high power applications, providing reliable solutions for various high voltage power supplies and switching systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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