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CMF55N70-VB Product details
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Product Introduction
CMF55N70-VB is a high-performance single N-channel MOSFET packaged in TO220F. This MOSFET uses Trench technology and has high voltage resistance and low on-resistance. The maximum drain-source voltage is 80V, the maximum gate-source voltage is ±20V, and the maximum drain current is 75A. At VGS=4.5V, the on-resistance is 8.7mΩ, and at VGS=10V it is 6.4mΩ. These characteristics make the CMF55N70-VB perform well in high-power switching applications and is suitable for use in power management and power conversion.
CMF55N70-VB is a high-performance single N-channel MOSFET packaged in TO220F. This MOSFET uses Trench technology and has high voltage resistance and low on-resistance. The maximum drain-source voltage is 80V, the maximum gate-source voltage is ±20V, and the maximum drain current is 75A. At VGS=4.5V, the on-resistance is 8.7mΩ, and at VGS=10V it is 6.4mΩ. These characteristics make the CMF55N70-VB perform well in high-power switching applications and is suitable for use in power management and power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | 6.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Model**: CMF55N70-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON)）**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench
- **Model**: CMF55N70-VB
- **Package**: TO220F
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON)）**:
- 8.7mΩ @ VGS=4.5V
- 6.4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
Applications and modules
CMF55N70-VB's high withstand voltage and low on-resistance enable it to excel in the following areas and modules:
1. **Power management system**:
- **High power switch**: In high power switching applications such as power adapters, switch mode power supplies (SMPS) and DC-DC converters, CMF55N70-VB can handle large currents and reduce switching losses, improving energy conversion efficiency.
- **Power protection**: Suitable for power protection circuits, this MOSFET can quickly respond to overcurrent or overvoltage conditions, provide effective power protection, and improve system stability and safety.
2. **Motor drive system**:
- **Motor control**: In motor drive applications, CMF55N70-VB can effectively control the operation of the motor with its low on-resistance and high current capability, and is suitable for industrial motors, power tools and automotive motor control.
3. **Load switch**:
- **High power load switch**: In applications that need to handle high power loads, CMF55N70-VB provides efficient switching performance and is suitable for high power load switching in switch control of electrical equipment and automation control systems.
4. **High frequency switching applications**:
- **High frequency switching circuit**: Due to its low on-resistance, CMF55N70-VB is suitable for high frequency switching circuits, such as high frequency switching power supplies and communication equipment, to achieve efficient switching operations and improve circuit performance.
The design of CMF55N70-VB enables it to have excellent performance in power management, motor drive, load switching and high frequency switching applications, and can meet the needs of high power and high efficiency applications.
CMF55N70-VB's high withstand voltage and low on-resistance enable it to excel in the following areas and modules:
1. **Power management system**:
- **High power switch**: In high power switching applications such as power adapters, switch mode power supplies (SMPS) and DC-DC converters, CMF55N70-VB can handle large currents and reduce switching losses, improving energy conversion efficiency.
- **Power protection**: Suitable for power protection circuits, this MOSFET can quickly respond to overcurrent or overvoltage conditions, provide effective power protection, and improve system stability and safety.
2. **Motor drive system**:
- **Motor control**: In motor drive applications, CMF55N70-VB can effectively control the operation of the motor with its low on-resistance and high current capability, and is suitable for industrial motors, power tools and automotive motor control.
3. **Load switch**:
- **High power load switch**: In applications that need to handle high power loads, CMF55N70-VB provides efficient switching performance and is suitable for high power load switching in switch control of electrical equipment and automation control systems.
4. **High frequency switching applications**:
- **High frequency switching circuit**: Due to its low on-resistance, CMF55N70-VB is suitable for high frequency switching circuits, such as high frequency switching power supplies and communication equipment, to achieve efficient switching operations and improve circuit performance.
The design of CMF55N70-VB enables it to have excellent performance in power management, motor drive, load switching and high frequency switching applications, and can meet the needs of high power and high efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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