CMF20C60-VB Product details
Product introduction:
CMF20C60-VB is a high-performance single N-channel power MOSFET in TO220F package. This MOSFET has a drain-source voltage (VDS) of 600V and a gate-source voltage (VGS) of ±30V, and adopts advanced SJ_Multi-EPI technology. Its gate threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 150mΩ at VGS=10V, and the maximum drain current (ID) is 20A. CMF20C60-VB is designed for high-voltage and high-current switching applications, providing excellent voltage resistance and conduction performance, and is suitable for application scenarios requiring high voltage and high power handling.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | 150mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
| Parameter| Value| Unit|
| ---------- | ------------------ | ------- |
| Package| TO220F | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Gate threshold voltage (Vth) | 3.5 | V |
| On-resistance (RDS(ON)) @VGS=10V | 150 | mΩ |
| Drain current (ID) | 20 | A |
| Technology| SJ_Multi-EPI | |
Domain and module applications:
The high voltage and high current handling capabilities of CMF20C60-VB make it widely used in multiple fields and modules:
1. **High voltage power switch**: In high voltage power management systems, CMF20C60-VB is suitable for use as a high voltage switch, such as in high voltage DC-DC converters, where it can handle high voltage and high power switching tasks, ensuring the stability and efficiency of the power system.
2. **Inverter application**: In inverters and other high voltage power conversion equipment, the MOSFET's 600V withstand voltage capability and low on-resistance make it suitable for high-efficiency power conversion, improving the overall efficiency and stability of the inverter.
3. **Power electronic equipment**: In power electronic equipment such as high power power supplies and motor drive control systems, CMF20C60-VB provides high voltage and high current handling capabilities, which can effectively handle high power switching tasks and enhance system reliability and performance.
4. **Battery Management System**: In high voltage battery management systems, this MOSFET can be used for battery protection and current control, handling high voltage and high current, ensuring safe and efficient operation of the battery pack.
5. **Industrial Application**: In industrial automation and control systems, CMF20C60-VB can be used for high voltage switching and control tasks, such as motor drive and high power load switching, providing stable and efficient switching solutions.
6. **High Power Load Switch**: In load switch applications that need to handle high voltage and high current, CMF20C60-VB provides excellent switching performance and high voltage tolerance, suitable for various high power load control.
With its high voltage tolerance and excellent conduction performance, CMF20C60-VB is an ideal choice for handling high voltage and high power applications, providing reliable solutions for various high voltage power supplies and switching systems.
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