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CMD55N10-VB Product details
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CMD55N10-VB MOSFET Product Introduction
**CMD55N10-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high voltage applications. This MOSFET uses Trench technology to provide a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.8V, which enables efficient switching at a lower gate-source voltage. The low on-resistance (RDS(ON)) and high continuous drain current (ID) of CMD55N10-VB enable it to perform well in high current applications.
**CMD55N10-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high voltage applications. This MOSFET uses Trench technology to provide a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.8V, which enables efficient switching at a lower gate-source voltage. The low on-resistance (RDS(ON)) and high continuous drain current (ID) of CMD55N10-VB enable it to perform well in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
CMD55N10-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.8V
- **RDS(ON)**: 18mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 45A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.8V
- **RDS(ON)**: 18mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
Application Examples of CMD55N10-VB MOSFET
1. **High-efficiency switching power supply**:
- In high-efficiency switching power supply (SMPS), CMD55N10-VB MOSFET acts as a switching element, and its low RDS(ON) ensures efficient energy conversion and low power consumption. This enables the power supply to remain efficient and stable while handling high currents, making it suitable for power management and conversion applications.
2. **Electric vehicle battery management**:
- In the battery management system of electric vehicles, this MOSFET can handle large currents and provide stable switching functions. Its low on-resistance helps reduce energy loss and improve charging and discharging efficiency, thereby extending the battery life.
3. **Motor drive**:
- In motor drive circuits, CMD55N10-VB is able to provide high-current switching and control functions. Its low RDS(ON) and high current capability make it suitable for various power tools and industrial motor drive systems, helping to improve the efficiency and performance of the motor.
4. **LED Driver**:
- For LED driver circuits, this MOSFET can effectively control current and ensure efficient operation of LED lighting systems. Its low on-resistance and high current capability enable it to stably drive high-power LED lighting, improving the overall efficiency of the system.
5. **Computer and Communication Equipment**:
- In the power management of computer and communication equipment, CMD55N10-VB provides efficient current switching functions, which helps to improve the performance and energy saving of the equipment. Its high current handling capability ensures stable operation of the equipment under various operating conditions, providing a reliable power management solution for modern computing and communication equipment.
The design and performance of CMD55N10-VB MOSFET enable it to excel in high current applications, providing stable switching operation and high efficiency. With its Trench technology and low on-resistance, designers can achieve efficient power management and control in a variety of applications.
1. **High-efficiency switching power supply**:
- In high-efficiency switching power supply (SMPS), CMD55N10-VB MOSFET acts as a switching element, and its low RDS(ON) ensures efficient energy conversion and low power consumption. This enables the power supply to remain efficient and stable while handling high currents, making it suitable for power management and conversion applications.
2. **Electric vehicle battery management**:
- In the battery management system of electric vehicles, this MOSFET can handle large currents and provide stable switching functions. Its low on-resistance helps reduce energy loss and improve charging and discharging efficiency, thereby extending the battery life.
3. **Motor drive**:
- In motor drive circuits, CMD55N10-VB is able to provide high-current switching and control functions. Its low RDS(ON) and high current capability make it suitable for various power tools and industrial motor drive systems, helping to improve the efficiency and performance of the motor.
4. **LED Driver**:
- For LED driver circuits, this MOSFET can effectively control current and ensure efficient operation of LED lighting systems. Its low on-resistance and high current capability enable it to stably drive high-power LED lighting, improving the overall efficiency of the system.
5. **Computer and Communication Equipment**:
- In the power management of computer and communication equipment, CMD55N10-VB provides efficient current switching functions, which helps to improve the performance and energy saving of the equipment. Its high current handling capability ensures stable operation of the equipment under various operating conditions, providing a reliable power management solution for modern computing and communication equipment.
The design and performance of CMD55N10-VB MOSFET enable it to excel in high current applications, providing stable switching operation and high efficiency. With its Trench technology and low on-resistance, designers can achieve efficient power management and control in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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