CMD516-VB Product details
Product introduction:
CMD516-VB is a high-performance single N-channel power MOSFET in TO252 package. This MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and adopts advanced trench technology. Its gate threshold voltage (Vth) is 1.7V, the on-resistance (RDS(ON)) is 3mΩ at VGS=4.5V, 2mΩ at VGS=10V, and the maximum drain current (ID) is 100A. CMD516-VB is designed for low-voltage and high-current switching applications, providing extremely low on-resistance and excellent switching speed, suitable for applications requiring high current and high efficiency.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameter| Value| Unit|
| ---------- | ------------------ | ------- |
| Package| TO252 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 30 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Gate threshold voltage (Vth) | 1.7 | V |
| On-resistance (RDS(ON)) @VGS=4.5V | 3 | mΩ |
| On-resistance (RDS(ON)) @VGS=10V | 2 | mΩ |
| Drain current (ID) | 100 | A |
| Technology| Trench | |
Domain and module applications:
The low voltage, high current capability and ultra-low on-resistance of CMD516-VB make it widely used in multiple fields and modules:
1. **Power management system**: In DC-DC converters and power modules, CMD516-VB can be used for efficient switching operations. Its extremely low on-resistance helps reduce power consumption and improve system efficiency and stability.
2. **Battery management system**: In battery management systems, this MOSFET is capable of handling high current switching tasks. Its low on-resistance and high current capability improve the performance and reliability of the system and are suitable for efficient battery protection and current control.
3. **Motor drive control**: In motor drive systems, CMD516-VB can be used for high current switch control. Its high current capability and ultra-low on-resistance ensure efficient and stable operation of motor drive and are suitable for driving and controlling high power motors.
4. **Inverter Application**: In inverters and other high-current power conversion devices, the low on-resistance and fast switching characteristics of CMD516-VB are suitable for efficient power conversion, improving the performance and efficiency of inverters.
5. **Load Switch**: In various load switching applications, the low conduction loss and high current capability of this MOSFET enable it to effectively control high-current loads, suitable for various switching control tasks.
6. **Industrial Automation**: In industrial automation and control systems, such as high-power switches and electric actuators, CMD516-VB is able to handle high-current tasks, provide stable and efficient switching solutions, and improve the performance and reliability of industrial equipment.
With its low voltage, high current capability and ultra-low on-resistance, CMD516-VB is an ideal choice for a variety of high-power and high-current applications, providing efficient and reliable power management and control solutions.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image