CMD50N04-VB Product details
Product introduction:
**CMD50N04-VB** is a high-performance single N-channel MOSFET in TO252 package. This MOSFET has a drain-source voltage (VDS) of 40V, making it suitable for medium voltage applications. Its maximum gate-source voltage (VGS) is ±20V, ensuring stable operation under a variety of driving voltage conditions. The gate threshold voltage (Vth) of CMD50N04-VB is 2.5V, and it can be turned on at a moderate gate voltage. The device uses advanced trench technology to provide a lower on-resistance (RDS(ON)), which is 14mΩ at VGS=4.5V and 12mΩ at VGS=10V. At the same time, its maximum drain current (ID) is 55A, which is suitable for a variety of medium voltage and current applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 55A
- **Technology**: Trench
Domain and module applications:
**CMD50N04-VB**’s performance characteristics enable it to excel in multiple fields and modules. Here are some specific application examples:
1. **DC-DC converter**: In DC-DC converters, CMD50N04-VB can be used as an efficient switching element. Its low on-resistance (RDS(ON)) reduces power loss and improves conversion efficiency, making it an ideal choice for high-efficiency power conversion.
2. **Motor drive**: In motor drive applications, this MOSFET can be used to control the switching of the motor. Its high current capability and low on-resistance enable it to effectively drive the motor and provide reliable switching control, improving the operating efficiency and stability of the motor.
3. **Power protection**: In power protection circuits, CMD50N04-VB can be used for load protection and overcurrent protection. Its high current capability and low RDS(ON) characteristics help protect power devices from overload and short circuit.
4. **Automotive electronics**: In automotive electronic systems, this MOSFET is suitable for battery management systems and motor control units. Its medium voltage and high current handling capabilities can meet various control and management needs in automobiles, improving the overall performance and reliability of the system.
5. **Industrial automation**: In industrial automation systems, CMD50N04-VB can be used for high-power load control and switching circuits. Its stable performance and high current capability make it suitable for critical control applications in industrial equipment, such as electric actuators and high-power switches.
From the above application examples, it can be seen that **CMD50N04-VB** performs well in medium voltage and high current applications, and is suitable for a variety of electronic devices and systems that require high performance and high reliability.
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