CMD50N04T-4L-VB Product details
Product introduction:
CMD50N04T-4L-VB is a high-performance dual N-channel MOSFET packaged in TO252-4L. This MOSFET uses Trench technology and is designed for applications that require low on-resistance and high current handling capabilities. It has a dual N-channel structure that can provide up to 32A of drain current, and has an on-resistance of 15mΩ and 9mΩ at gate-source voltages of 4.5V and 10V, respectively. This makes the CMD50N04T-4L-VB an excellent choice for power management, switching power supplies, and other high-power applications, and is an ideal choice for high-efficiency circuit design.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Dual-N+N | 30V | 1.7V | 32A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Dual-N+N | 30V | 1.7V | 32A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Dual-N+N | 30V | 1.7V | 32A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Dual-N+N |
- **Model**: CMD50N04T-4L-VB
- **Package**: TO252-4L
- **Configuration**: Dual N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum drain current (ID)**: 32A
- **Technology**: Trench
Domain and module applications:
The high current handling capability and low on-resistance of the CMD50N04T-4L-VB MOSFET enable it to excel in a variety of applications and modules. Here are a few typical application examples:
1. **Power management system**:
- **DC-DC converter**: In DC-DC converters, the CMD50N04T-4L-VB can be used as an efficient switching element, capable of handling large currents and reducing conduction losses, thereby improving energy conversion efficiency, and is suitable for high-efficiency power systems.
- **Switching power supply (SMPS)**: In switching power supply design, this MOSFET can achieve stable and reliable power switch control, improve the overall performance and reliability of the power module, and is suitable for power supply design of various electronic devices.
2. **Motor control system**:
- **Motor drive**: In motor drive applications, the CMD50N04T-4L-VB can provide high current control and low on-resistance, improving the performance and efficiency of the motor, and is suitable for industrial motors, household motors, and power tools.
- **Electric Vehicle**: In the motor control system of electric vehicles, this MOSFET can handle high current loads, ensure the stable operation of the power system of electric vehicles, and improve overall performance and endurance.
3. **Load Switch**:
- **High-efficiency Load Switch**: Used in various load switch applications, CMD50N04T-4L-VB provides low conduction loss and high switching speed, suitable for load control applications such as industrial automation equipment and consumer electronics, and improves the energy efficiency and reliability of the system.
4. **Power Protection Circuit**:
- **Protection Circuit**: In overcurrent protection, overvoltage protection and short-circuit protection circuits, CMD50N04T-4L-VB can provide fast response and efficient protection, and is widely used in communication equipment, smart home systems, etc., to ensure the safety and stability of the system.
CMD50N04T-4L-VB is suitable for various high-power and high-efficiency circuit design requirements through its excellent performance and flexible application range, providing stable and efficient support for electronic systems.
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