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CMD4454-VB Product details
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CMD4454-VB MOSFET Product Introduction
**CMD4454-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high voltage applications. This MOSFET uses Trench technology to provide a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 2.5V, enabling it to switch effectively at lower gate-source voltages. This MOSFET has a low on-resistance (RDS(ON)), ensuring high efficiency and low power consumption in medium and high voltage environments.
**CMD4454-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high voltage applications. This MOSFET uses Trench technology to provide a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 2.5V, enabling it to switch effectively at lower gate-source voltages. This MOSFET has a low on-resistance (RDS(ON)), ensuring high efficiency and low power consumption in medium and high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 2.5V | 25.4A | 74mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 2.5V | 25.4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 150V | 2.5V | 25.4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
CMD4454-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 150V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 2.5V
- **RDS(ON)**: 74mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 25.4A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 150V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 2.5V
- **RDS(ON)**: 74mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 25.4A
- **Technology**: Trench
Domain and module applications：
Application Examples of CMD4454-VB MOSFET
1. **High-voltage Switching Power Supply**:
- In high-voltage switching power supplies (SMPS), CMD4454-VB MOSFET is used as a switching element and can stably operate under a high voltage environment of 150V. Its low RDS(ON) enables efficient energy conversion and is suitable for switching and controlling high-voltage power supplies.
2. **Electric Vehicle Charger**:
- For electric vehicle chargers, CMD4454-VB provides reliable high-voltage switching functions to ensure safety and efficiency during high-voltage charging. Its high drain-source voltage and low on-resistance help improve the performance and efficiency of the charging system.
3. **Power Electronic Converters**:
- In power electronic converters, such as DC-DC converters, this MOSFET is able to handle high voltages and provide stable switching functions. Its Trench technology and low RDS(ON) ensure efficient operation and low power consumption of the system.
4. **Industrial Power**:
- In various industrial power management systems, the CMD4454-VB can be used as a high voltage switching element. Its high drain-source voltage and good switching characteristics make it suitable for the control and protection of high voltage loads.
5. **High Voltage Power Protection**:
- In high voltage power protection circuits, this MOSFET can be used as an overvoltage protection switch. Its high voltage handling capability ensures that the system can effectively protect other electronic components when encountering voltage surges.
The design and performance of the CMD4454-VB MOSFET enable it to excel in high voltage applications, providing stable switching operation and high efficiency. With its Trench technology and low on-resistance, designers can achieve efficient power management and protection in a variety of high voltage environments.
1. **High-voltage Switching Power Supply**:
- In high-voltage switching power supplies (SMPS), CMD4454-VB MOSFET is used as a switching element and can stably operate under a high voltage environment of 150V. Its low RDS(ON) enables efficient energy conversion and is suitable for switching and controlling high-voltage power supplies.
2. **Electric Vehicle Charger**:
- For electric vehicle chargers, CMD4454-VB provides reliable high-voltage switching functions to ensure safety and efficiency during high-voltage charging. Its high drain-source voltage and low on-resistance help improve the performance and efficiency of the charging system.
3. **Power Electronic Converters**:
- In power electronic converters, such as DC-DC converters, this MOSFET is able to handle high voltages and provide stable switching functions. Its Trench technology and low RDS(ON) ensure efficient operation and low power consumption of the system.
4. **Industrial Power**:
- In various industrial power management systems, the CMD4454-VB can be used as a high voltage switching element. Its high drain-source voltage and good switching characteristics make it suitable for the control and protection of high voltage loads.
5. **High Voltage Power Protection**:
- In high voltage power protection circuits, this MOSFET can be used as an overvoltage protection switch. Its high voltage handling capability ensures that the system can effectively protect other electronic components when encountering voltage surges.
The design and performance of the CMD4454-VB MOSFET enable it to excel in high voltage applications, providing stable switching operation and high efficiency. With its Trench technology and low on-resistance, designers can achieve efficient power management and protection in a variety of high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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