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CMD2N60-VB Product details
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CMD2N60-VB MOSFET Product Introduction
CMD2N60-VB is a high voltage single N-channel MOSFET in TO252 package. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) is 3440mΩ at a gate-source voltage of 4.5V and 4300mΩ at a gate-source voltage of 10V. The maximum drain current (ID) is 2A. CMD2N60-VB is manufactured using planar technology to provide reliable high voltage switching performance.
CMD2N60-VB is a high voltage single N-channel MOSFET in TO252 package. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) is 3440mΩ at a gate-source voltage of 4.5V and 4300mΩ at a gate-source voltage of 10V. The maximum drain current (ID) is 2A. CMD2N60-VB is manufactured using planar technology to provide reliable high voltage switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
CMD2N60-VB MOSFET Detailed parameter description
1. **Package**
- **Type**: TO252
2. **Configuration**
- **Type**: Single N-channel
3. **Electrical parameters**
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
4. **On-resistance**
- **RDS(ON) @ VGS=4.5V**: 3440mΩ
- **RDS(ON) @ VGS=10V**: 4300mΩ
5. **Current**
- **Maximum drain current (ID)**: 2A
6. **Technology**
- **Manufacturing process**: Plannar technology
1. **Package**
- **Type**: TO252
2. **Configuration**
- **Type**: Single N-channel
3. **Electrical parameters**
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
4. **On-resistance**
- **RDS(ON) @ VGS=4.5V**: 3440mΩ
- **RDS(ON) @ VGS=10V**: 4300mΩ
5. **Current**
- **Maximum drain current (ID)**: 2A
6. **Technology**
- **Manufacturing process**: Plannar technology
Domain and module applications：
CMD2N60-VB MOSFET Applications and Modules
1. **High-voltage switch**
- **Application examples**: The CMD2N60-VB MOSFET is particularly suitable for high-voltage switching applications, such as high-voltage power converters and power adapters. Its high drain-source voltage of 650V allows it to operate reliably in high-voltage environments, and its planar technology provides stable switching performance.
2. **Power management**
- **Application examples**: In power management systems, the CMD2N60-VB can be used as a high-voltage switching element for power protection circuits that need to handle high voltages. Its high voltage handling capability and stable conduction characteristics ensure the reliability and safety of the system.
3. **Industrial control**
- **Application examples**: This MOSFET is widely used in industrial control systems, such as industrial motor control and automation equipment. Its high voltage and high reliability enable it to withstand high stress and high voltage loads in industrial environments.
4. **Lighting control**
- **Application examples**: CMD2N60-VB MOSFET performs well in high-voltage lighting control systems, such as LED drive circuits and switch control of high-voltage lamps. Its high voltage capability and low leakage current ensure the efficiency and stability of the lighting system.
5. **Battery charger**
- **Application examples**: In battery chargers and energy storage systems, CMD2N60-VB MOSFET can be used to control the high-voltage charging path. Its high voltage handling capability and low on-resistance help improve charging efficiency and protect the battery from high voltage damage.
With its high voltage handling capability and stable switching characteristics, CMD2N60-VB MOSFET provides a reliable solution for a variety of high-voltage applications.
1. **High-voltage switch**
- **Application examples**: The CMD2N60-VB MOSFET is particularly suitable for high-voltage switching applications, such as high-voltage power converters and power adapters. Its high drain-source voltage of 650V allows it to operate reliably in high-voltage environments, and its planar technology provides stable switching performance.
2. **Power management**
- **Application examples**: In power management systems, the CMD2N60-VB can be used as a high-voltage switching element for power protection circuits that need to handle high voltages. Its high voltage handling capability and stable conduction characteristics ensure the reliability and safety of the system.
3. **Industrial control**
- **Application examples**: This MOSFET is widely used in industrial control systems, such as industrial motor control and automation equipment. Its high voltage and high reliability enable it to withstand high stress and high voltage loads in industrial environments.
4. **Lighting control**
- **Application examples**: CMD2N60-VB MOSFET performs well in high-voltage lighting control systems, such as LED drive circuits and switch control of high-voltage lamps. Its high voltage capability and low leakage current ensure the efficiency and stability of the lighting system.
5. **Battery charger**
- **Application examples**: In battery chargers and energy storage systems, CMD2N60-VB MOSFET can be used to control the high-voltage charging path. Its high voltage handling capability and low on-resistance help improve charging efficiency and protect the battery from high voltage damage.
With its high voltage handling capability and stable switching characteristics, CMD2N60-VB MOSFET provides a reliable solution for a variety of high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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