CMD20P03-VB Product details
Product introduction:
CMD20P03-VB is a high-performance single P-channel power MOSFET in TO252 package. This MOSFET has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V, and adopts advanced trench technology. Its gate threshold voltage (Vth) is -1.7V, the on-resistance (RDS(ON)) is 46mΩ at VGS=4.5V, 33mΩ at VGS=10V, and the maximum drain current (ID) is -38A. CMD20P03-VB is designed for low-voltage and high-current switching applications, providing excellent switching speed and low conduction loss.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
| Parameter| Value| Unit|
| ---------- | ------------------ | ------- |
| Package| TO252 | |
| Configuration| Single P-channel| |
| Drain-source voltage (VDS) | -30 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Gate threshold voltage (Vth) | -1.7 | V |
| On-resistance (RDS(ON)) @VGS=4.5V | 46 | mΩ |
| On-resistance (RDS(ON)) @VGS=10V | 33 | mΩ |
| Drain current (ID) | -38 | A |
| Technology| Trench | |
Domain and module applications:
The low voltage, high current capability and low on-resistance of CMD20P03-VB make it widely used in multiple fields and modules:
1. **Power management system**: In low voltage and high current power management systems, such as DC-DC converters and power modules, CMD20P03-VB can be used for high-efficiency switching operations. Its low on-resistance helps reduce power consumption and improve the overall efficiency of the system.
2. **Battery management system**: This MOSFET is suitable for battery management systems to handle high current switching tasks. Its low on-resistance and high current capability can effectively improve the performance and reliability of battery management systems.
3. **Motor drive control**: In motor drive systems, CMD20P03-VB can be used for high current switching control. Its high current capability and low on-resistance ensure stable operation and high efficiency of motor drive systems.
4. **Load Switch**: In load switch applications that require low conduction losses, this MOSFET provides superior performance, ensuring high system efficiency and low power consumption.
5. **Inverter Application**: In low-voltage inverters, this MOSFET can be used for high-current switching operations. Its low on-resistance and high switching speed are suitable for high-efficiency power conversion.
6. **Industrial Automation**: In industrial automation and control systems, such as high-power switches and electric actuators, CMD20P03-VB is able to handle high-current tasks and provide stable and efficient switching performance.
With its low voltage, high current capability and excellent switching performance, CMD20P03-VB is suitable for a variety of high-power and high-current application scenarios, providing stable and efficient power management solutions.
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