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CMD20P03-VB Product details

Product introduction:

1. Product Introduction of CMD20P03-VB Model



CMD20P03-VB is a high-performance single P-channel power MOSFET in TO252 package. This MOSFET has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V, and adopts advanced trench technology. Its gate threshold voltage (Vth) is -1.7V, the on-resistance (RDS(ON)) is 46mΩ at VGS=4.5V, 33mΩ at VGS=10V, and the maximum drain current (ID) is -38A. CMD20P03-VB is designed for low-voltage and high-current switching applications, providing excellent switching speed and low conduction loss.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -30V -1.7V -38A 33mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -30V -1.7V -38A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -30V -1.7V -38A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
II. Detailed parameter description of CMD20P03-VB model



| Parameter| Value| Unit|

| ---------- | ------------------ | ------- |

| Package| TO252 | |

| Configuration| Single P-channel| |

| Drain-source voltage (VDS) | -30 | V |

| Gate-source voltage (VGS) | ±20 | V |

| Gate threshold voltage (Vth) | -1.7 | V |

| On-resistance (RDS(ON)) @VGS=4.5V | 46 | mΩ |

| On-resistance (RDS(ON)) @VGS=10V | 33 | mΩ |

| Drain current (ID) | -38 | A |

| Technology| Trench | |



Domain and module applications:

III. Application fields and modules of CMD20P03-VB



The low voltage, high current capability and low on-resistance of CMD20P03-VB make it widely used in multiple fields and modules:



1. **Power management system**: In low voltage and high current power management systems, such as DC-DC converters and power modules, CMD20P03-VB can be used for high-efficiency switching operations. Its low on-resistance helps reduce power consumption and improve the overall efficiency of the system.



2. **Battery management system**: This MOSFET is suitable for battery management systems to handle high current switching tasks. Its low on-resistance and high current capability can effectively improve the performance and reliability of battery management systems.



3. **Motor drive control**: In motor drive systems, CMD20P03-VB can be used for high current switching control. Its high current capability and low on-resistance ensure stable operation and high efficiency of motor drive systems.



4. **Load Switch**: In load switch applications that require low conduction losses, this MOSFET provides superior performance, ensuring high system efficiency and low power consumption.



5. **Inverter Application**: In low-voltage inverters, this MOSFET can be used for high-current switching operations. Its low on-resistance and high switching speed are suitable for high-efficiency power conversion.



6. **Industrial Automation**: In industrial automation and control systems, such as high-power switches and electric actuators, CMD20P03-VB is able to handle high-current tasks and provide stable and efficient switching performance.



With its low voltage, high current capability and excellent switching performance, CMD20P03-VB is suitable for a variety of high-power and high-current application scenarios, providing stable and efficient power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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