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CMD1653-VB Product details
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CMD1653-VB MOSFET Product Introduction
CMD1653-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low-medium voltage and high-current applications. It uses Trench technology, which optimizes on-resistance and switching performance, providing high efficiency and reliability. The design of CMD1653-VB makes it suitable for applications that require high current handling capability and low on-resistance, such as power management and power switching.
CMD1653-VB is a high-performance single N-channel MOSFET in TO252 package, designed for low-medium voltage and high-current applications. It uses Trench technology, which optimizes on-resistance and switching performance, providing high efficiency and reliability. The design of CMD1653-VB makes it suitable for applications that require high current handling capability and low on-resistance, such as power management and power switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
CMD1653-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
CMD1653-VB MOSFET Applications and Modules
#### Power Management
The low on-resistance and high current capability of the CMD1653-VB make it ideal for use in power management systems, such as high-efficiency DC-DC converters and power switches. These applications require the MOSFET to maintain low power losses at high currents, thereby improving the overall efficiency of the system.
#### Power Tools and Equipment
In power tools and equipment, the high current handling capability and low on-resistance of the CMD1653-VB ensure stability and efficient operation of the equipment under high load conditions. These features make it a key component in power tool power systems, ensuring high power output and reliable performance.
#### Industrial Automation
In industrial automation applications, such as motor drives and high-power switches, the CMD1653-VB provides reliable performance. Its excellent switching characteristics and high current capability enable it to meet the requirements for high-power switches in industrial applications, improving the response speed and stability of the system.
#### Automotive Electronics
CMD1653-VB is also suitable for power and drive modules in automotive electronic systems. Its high current handling capability and low on-resistance help optimize the power efficiency of automotive systems such as electric vehicles, hybrid vehicles and other automotive electronic devices.
In summary, the CMD1653-VB MOSFET is an ideal choice for high-efficiency power management and power switching applications with its low on-resistance and high current capability. Its Trench technology ensures stable performance in high current and high power environments, making it suitable for a variety of industrial, consumer and automotive electronics products.
#### Power Management
The low on-resistance and high current capability of the CMD1653-VB make it ideal for use in power management systems, such as high-efficiency DC-DC converters and power switches. These applications require the MOSFET to maintain low power losses at high currents, thereby improving the overall efficiency of the system.
#### Power Tools and Equipment
In power tools and equipment, the high current handling capability and low on-resistance of the CMD1653-VB ensure stability and efficient operation of the equipment under high load conditions. These features make it a key component in power tool power systems, ensuring high power output and reliable performance.
#### Industrial Automation
In industrial automation applications, such as motor drives and high-power switches, the CMD1653-VB provides reliable performance. Its excellent switching characteristics and high current capability enable it to meet the requirements for high-power switches in industrial applications, improving the response speed and stability of the system.
#### Automotive Electronics
CMD1653-VB is also suitable for power and drive modules in automotive electronic systems. Its high current handling capability and low on-resistance help optimize the power efficiency of automotive systems such as electric vehicles, hybrid vehicles and other automotive electronic devices.
In summary, the CMD1653-VB MOSFET is an ideal choice for high-efficiency power management and power switching applications with its low on-resistance and high current capability. Its Trench technology ensures stable performance in high current and high power environments, making it suitable for a variety of industrial, consumer and automotive electronics products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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