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CMD12P10S-VB Product details

Product introduction:

Product Introduction



**CMD12P10S-VB** is a high-performance single P-channel MOSFET in TO252 package. The device has a drain-source voltage (VDS) of -100V, which is suitable for high-voltage load switch applications. Its maximum gate-source voltage (VGS) is ±20V, and it can operate stably over a wide range of drive voltages. The gate threshold voltage (Vth) of CMD12P10S-VB is -2V, which enables it to be turned on at a relatively low gate voltage. This MOSFET uses advanced trench technology to provide a reasonable on-resistance (RDS(ON)), which is 280mΩ at VGS=4.5V and 250mΩ at VGS=10V. Its maximum drain current (ID) is -8.8A, which is suitable for a variety of high-voltage and medium-current applications.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -100V -2V -8.8A 250mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -100V -2V -8.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -100V -2V -8.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
Detailed parameter description



- **Package type**: TO252

- **Configuration**: Single P-channel

- **Drain-source voltage (VDS)**: -100V

- **Maximum gate-source voltage (VGS)**: ±20V

- **Gate threshold voltage (Vth)**: -2V

- **On-resistance (RDS(ON))**:

- 280mΩ @ VGS = 4.5V

- 250mΩ @ VGS = 10V

- **Maximum drain current (ID)**: -8.8A

- **Technology**: Trench



Domain and module applications:

Application fields and modules



**CMD12P10S-VB**'s high voltage and medium current capabilities enable it to excel in multiple fields and modules. Here are some specific application examples:



1. **Power switch**: In high voltage power switching applications, such as power management and load switching, CMD12P10S-VB can be used as a switching element for high voltage loads. Its high drain-source voltage (VDS) can withstand higher voltages and provide stable switching performance.



2. **Electric vehicles**: In electric vehicles, this MOSFET can be used for high voltage battery management and power conversion applications. Its high voltage capability and moderate current handling capability enable it to provide reliable switching control in battery management and motor control in electric vehicles.



3. **Power amplifier**: In power amplifiers, CMD12P10S-VB can be used as a power switch to help achieve high voltage and high efficiency power amplification. Its low RDS(ON) characteristics and high voltage capability ensure stable power amplification performance.



4. **Power Protection**: In power protection systems, this MOSFET can be used for high voltage overvoltage protection and load disconnection applications. Its high voltage capability enables it to effectively handle overvoltage events and protect power and load devices.



5. **Inverter and UPS**: In inverter and uninterruptible power supply (UPS) systems, CMD12P10S-VB can be used as a high voltage switch to help achieve efficient power conversion and system protection. Its high voltage tolerance and reliable switching performance are key factors in these applications.



From the above application examples, it can be seen that **CMD12P10S-VB** performs well in high voltage and medium current applications, and is suitable for a variety of electronic devices and systems requiring high voltage and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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