CMD100NO3-VB Product details
Product introduction:
CMD100NO3-VB is a high-performance single N-channel MOSFET in TO252 package. Designed for high current and low resistance switching applications, this MOSFET has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) is 3mΩ at a gate-source voltage of 4.5V and 2mΩ at a gate-source voltage of 10V. The maximum drain current (ID) is 100A. CMD100NO3-VB uses advanced trench technology to provide excellent switching performance and high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
1. **Package**
- **Type**: TO252
2. **Configuration**
- **Type**: Single N-channel
3. **Electrical parameters**
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
4. **On-resistance**
- **RDS(ON) @ VGS=4.5V**: 3mΩ
- **RDS(ON) @ VGS=10V**: 2mΩ
5. **Current**
- **Maximum drain current (ID)**: 100A
6. **Technology**
- **Manufacturing process**: Trench technology
Domain and module applications:
1. **High Power Switching**
- **Application Examples**: The CMD100NO3-VB MOSFET is ideal for high power switching applications such as high current DC-DC converters and motor drive modules. Its extremely low on-resistance and high current handling capability enable it to efficiently handle high current loads, reduce power consumption and improve the overall efficiency of the system.
2. **Power Management**
- **Application Examples**: In power management systems such as power distribution and power protection circuits, the CMD100NO3-VB MOSFET can be used as an efficient switching element, handling high current paths. Its high current capability and low on-resistance ensure high efficiency and stability of power management.
3. **Motor Control**
- **Application Examples**: This MOSFET performs well in motor control systems such as motor drive modules for electric vehicles and motor controllers in industrial automation. Its high current capability allows stable switching operation in high current motor drive applications and can withstand high loads.
4. **LED drive**
- **Application examples**: In high power LED drive circuits, CMD100NO3-VB can be used for switch control to ensure efficient driving and stable operation of LEDs. Its low on-resistance ensures efficient power transfer and is suitable for high brightness LED applications.
5. **Battery management**
- **Application examples**: CMD100NO3-VB MOSFET is also suitable for high power switches in battery management systems, such as battery protection and load switches. Its high current handling capability can effectively manage the battery charging and discharging process and protect the battery from damage due to overcurrent or short circuit.
With its low on-resistance and high current capability, CMD100NO3-VB MOSFET provides an efficient and reliable switching solution for a variety of high power and high current applications.
Technical support:
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