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CMD06NO3-VB Product details
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CMD06NO3-VB MOSFET Product Introduction
**CMD06NO3-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for high current and high efficiency switching applications. This MOSFET adopts Trench technology, with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, providing extremely low on-resistance. Its threshold voltage (Vth) is 1.7V, which enables it to switch effectively at a lower gate-source voltage. This MOSFET is particularly suitable for applications requiring high current and low power consumption.
**CMD06NO3-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for high current and high efficiency switching applications. This MOSFET adopts Trench technology, with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, providing extremely low on-resistance. Its threshold voltage (Vth) is 1.7V, which enables it to switch effectively at a lower gate-source voltage. This MOSFET is particularly suitable for applications requiring high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
CMD06NO3-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **RDS(ON)**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 80A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **RDS(ON)**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Application Examples of CMD06NO3-VB MOSFET
1. **High-efficiency Switching Power Supply**:
- In high-efficiency switching power supplies (SMPS), CMD06NO3-VB MOSFET can be used as a switching element, and its low RDS(ON) ensures efficient energy conversion and low power consumption. This allows the power supply to remain efficient and stable when handling high currents.
2. **Electric Vehicle Battery Management**:
- In the battery management system of electric vehicles, this MOSFET is able to handle large currents and provide stable switching functions. Its low on-resistance helps reduce energy loss and improve charging and discharging efficiency.
3. **Motor Drive**:
- In motor drive circuits, CMD06NO3-VB is able to provide high-current switching and control functions. It is suitable for various power tools and industrial motor drive systems, reducing power consumption and heat generation through its low RDS(ON).
4. **LED Driver**:
- For LED driver circuits, this MOSFET can effectively control current to ensure efficient operation of LED lighting systems. Its low on-resistance and high current capability enable it to stably drive high-power LED lighting.
5. **Computer and Communication Equipment**:
- In power management of computer and communication equipment, CMD06NO3-VB provides efficient current switching functions, which helps improve the performance and energy saving of equipment. Its high current handling capability ensures stable operation of the equipment under various operating conditions.
By leveraging the Trench technology and excellent electrical performance of CMD06NO3-VB, designers can achieve excellent performance and efficient power management in a variety of high-current applications.
1. **High-efficiency Switching Power Supply**:
- In high-efficiency switching power supplies (SMPS), CMD06NO3-VB MOSFET can be used as a switching element, and its low RDS(ON) ensures efficient energy conversion and low power consumption. This allows the power supply to remain efficient and stable when handling high currents.
2. **Electric Vehicle Battery Management**:
- In the battery management system of electric vehicles, this MOSFET is able to handle large currents and provide stable switching functions. Its low on-resistance helps reduce energy loss and improve charging and discharging efficiency.
3. **Motor Drive**:
- In motor drive circuits, CMD06NO3-VB is able to provide high-current switching and control functions. It is suitable for various power tools and industrial motor drive systems, reducing power consumption and heat generation through its low RDS(ON).
4. **LED Driver**:
- For LED driver circuits, this MOSFET can effectively control current to ensure efficient operation of LED lighting systems. Its low on-resistance and high current capability enable it to stably drive high-power LED lighting.
5. **Computer and Communication Equipment**:
- In power management of computer and communication equipment, CMD06NO3-VB provides efficient current switching functions, which helps improve the performance and energy saving of equipment. Its high current handling capability ensures stable operation of the equipment under various operating conditions.
By leveraging the Trench technology and excellent electrical performance of CMD06NO3-VB, designers can achieve excellent performance and efficient power management in a variety of high-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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