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CMB7N60M-VB Product details
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CMB7N60M-VB MOSFET Product Introduction
**CMB7N60M-VB** is a high-voltage N-Channel MOSFET in TO263 package, designed for high voltage and high reliability applications. This MOSFET adopts Plannar technology, has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for handling switching operations in high voltage environments. Its threshold voltage (Vth) is 3.5V, providing stable switching performance. Although its RDS(ON) value is relatively high, it can still ensure good switching efficiency and reliability in high voltage applications.
**CMB7N60M-VB** is a high-voltage N-Channel MOSFET in TO263 package, designed for high voltage and high reliability applications. This MOSFET adopts Plannar technology, has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for handling switching operations in high voltage environments. Its threshold voltage (Vth) is 3.5V, providing stable switching performance. Although its RDS(ON) value is relatively high, it can still ensure good switching efficiency and reliability in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 10A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
CMB7N60M-VB MOSFET Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **RDS(ON)**: 1100mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 10A
- **Technology**: Plannar
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **RDS(ON)**: 1100mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 10A
- **Technology**: Plannar
Domain and module applications：
Application Examples of CMB7N60M-VB MOSFET
1. **High-voltage Switch**:
- The CMB7N60M-VB MOSFET can be used in high-voltage switching applications such as power electronics and high-voltage inverters. Its high drain-source voltage (VDS) allows it to handle high-voltage loads, making it suitable for applications that require high-voltage switching and control.
2. **Power Management**:
- In high-voltage power management systems, this MOSFET is able to provide stable switching performance and is suitable for high-voltage power converters and regulators. Despite its high RDS(ON) value, its performance can be optimized through proper thermal management and heat dissipation measures in the design.
3. **Inverter**:
- For solar inverter and industrial inverter applications, the CMB7N60M-VB provides reliable high-voltage switching capabilities. Its high voltage capability enables it to operate stably in high-voltage environments, ensuring safe and efficient operation of the inverter system.
4. **EV Charger**:
- In EV chargers, the CMB7N60M-VB MOSFET can be used for high voltage switching and control functions to support high voltage charging processes. Its high voltage handling capability ensures the reliability and performance of the charger.
5. **Power Electronic Control**:
- In various power electronic control systems, such as high voltage power supply control and high voltage protection circuits, the CMB7N60M-VB is able to provide effective switching and protection functions. Its high voltage tolerance and stable performance make it suitable for demanding power electronic applications.
By leveraging the Plannar technology and high voltage capability of the CMB7N60M-VB, designers can achieve stable and reliable performance in various high voltage applications, ensuring the efficiency and safety of the system.
1. **High-voltage Switch**:
- The CMB7N60M-VB MOSFET can be used in high-voltage switching applications such as power electronics and high-voltage inverters. Its high drain-source voltage (VDS) allows it to handle high-voltage loads, making it suitable for applications that require high-voltage switching and control.
2. **Power Management**:
- In high-voltage power management systems, this MOSFET is able to provide stable switching performance and is suitable for high-voltage power converters and regulators. Despite its high RDS(ON) value, its performance can be optimized through proper thermal management and heat dissipation measures in the design.
3. **Inverter**:
- For solar inverter and industrial inverter applications, the CMB7N60M-VB provides reliable high-voltage switching capabilities. Its high voltage capability enables it to operate stably in high-voltage environments, ensuring safe and efficient operation of the inverter system.
4. **EV Charger**:
- In EV chargers, the CMB7N60M-VB MOSFET can be used for high voltage switching and control functions to support high voltage charging processes. Its high voltage handling capability ensures the reliability and performance of the charger.
5. **Power Electronic Control**:
- In various power electronic control systems, such as high voltage power supply control and high voltage protection circuits, the CMB7N60M-VB is able to provide effective switching and protection functions. Its high voltage tolerance and stable performance make it suitable for demanding power electronic applications.
By leveraging the Plannar technology and high voltage capability of the CMB7N60M-VB, designers can achieve stable and reliable performance in various high voltage applications, ensuring the efficiency and safety of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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