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CMB68N06L-VB Product details
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CMB68N06L-VB MOSFET Product Introduction
CMB68N06L-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium-to-high voltage and high current applications. It uses Trench technology, which optimizes on-resistance and switching performance, and is suitable for power management and power switching applications that require high efficiency and high reliability. Its high current capability and low on-resistance make it perform well in high power environments.
CMB68N06L-VB is a high-performance single N-channel MOSFET in TO263 package, designed for medium-to-high voltage and high current applications. It uses Trench technology, which optimizes on-resistance and switching performance, and is suitable for power management and power switching applications that require high efficiency and high reliability. Its high current capability and low on-resistance make it perform well in high power environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
CMB68N06L-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
CMB68N06L-VB MOSFET Applications and Modules
#### Power Management
The low on-resistance and high current capability of the CMB68N06L-VB make it ideal for power management systems, such as high-efficiency DC-DC converters and power switches. These applications require MOSFETs to maintain low power losses at high currents, thereby improving the overall efficiency of the system.
#### Electric Vehicles
In electric vehicle applications, the CMB68N06L-VB can be used in motor drives and power conversion modules. Its high current capability and low on-resistance ensure the stability and efficient operation of electric vehicles under high load conditions, and it is a key component in the power system of electric vehicles.
#### Industrial Control Systems
In industrial automation and control systems, such as motor drives and high-power switches, the CMB68N06L-VB provides reliable performance. Its excellent switching characteristics and high current capability enable it to meet the requirements for high-power switches in industrial applications, improving the response speed and stability of the system.
#### Portable Electronic Devices
CMB68N06L-VB is also suitable for portable electronic devices that require high-efficiency power management. Its low on-resistance and high current handling capabilities help optimize the power efficiency of devices such as smartphones, tablets and other consumer electronics, improving the performance and battery life of the devices.
In summary, the CMB68N06L-VB MOSFET, with its low on-resistance and high current capability, is an ideal choice for high-efficiency power management and power switching applications. Its Trench technology ensures stable performance in high current and high power environments, making it suitable for a variety of industrial and consumer electronics.
#### Power Management
The low on-resistance and high current capability of the CMB68N06L-VB make it ideal for power management systems, such as high-efficiency DC-DC converters and power switches. These applications require MOSFETs to maintain low power losses at high currents, thereby improving the overall efficiency of the system.
#### Electric Vehicles
In electric vehicle applications, the CMB68N06L-VB can be used in motor drives and power conversion modules. Its high current capability and low on-resistance ensure the stability and efficient operation of electric vehicles under high load conditions, and it is a key component in the power system of electric vehicles.
#### Industrial Control Systems
In industrial automation and control systems, such as motor drives and high-power switches, the CMB68N06L-VB provides reliable performance. Its excellent switching characteristics and high current capability enable it to meet the requirements for high-power switches in industrial applications, improving the response speed and stability of the system.
#### Portable Electronic Devices
CMB68N06L-VB is also suitable for portable electronic devices that require high-efficiency power management. Its low on-resistance and high current handling capabilities help optimize the power efficiency of devices such as smartphones, tablets and other consumer electronics, improving the performance and battery life of the devices.
In summary, the CMB68N06L-VB MOSFET, with its low on-resistance and high current capability, is an ideal choice for high-efficiency power management and power switching applications. Its Trench technology ensures stable performance in high current and high power environments, making it suitable for a variety of industrial and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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