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CMB200N04-7-VB Product details
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CMB200N04-7-VB MOSFET Product Introduction
CMB200N04-7-VB is a high-performance dual N-channel MOSFET in TO263-7L package. The MOSFET has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is only 0.9mΩ when the gate-source voltage is 10V, and the maximum drain current (ID) reaches 350A. CMB200N04-7-VB uses advanced trench technology to provide low on-resistance and high current carrying capacity, suitable for high power density and high efficiency application scenarios.
CMB200N04-7-VB is a high-performance dual N-channel MOSFET in TO263-7L package. The MOSFET has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is only 0.9mΩ when the gate-source voltage is 10V, and the maximum drain current (ID) reaches 350A. CMB200N04-7-VB uses advanced trench technology to provide low on-resistance and high current carrying capacity, suitable for high power density and high efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | 0.9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
CMB200N04-7-VB MOSFET Detailed parameter description
1. **Package**
- **Type**: TO263-7L
2. **Configuration**
- **Type**: Dual N-channel
3. **Electrical parameters**
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
4. **On-resistance**
- **RDS(ON) @ VGS=10V**: 0.9mΩ
5. **Current**
- **Maximum drain current (ID)**: 350A
6. **Technology**
- **Manufacturing process**: Trench technology
1. **Package**
- **Type**: TO263-7L
2. **Configuration**
- **Type**: Dual N-channel
3. **Electrical parameters**
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
4. **On-resistance**
- **RDS(ON) @ VGS=10V**: 0.9mΩ
5. **Current**
- **Maximum drain current (ID)**: 350A
6. **Technology**
- **Manufacturing process**: Trench technology
Domain and module applications：
CMB200N04-7-VB MOSFET Applications and Modules
1. **High Power Switching**
- **Application Examples**: The CMB200N04-7-VB MOSFET is ideal for high power switching applications such as power converters and motor drive modules. Its low on-resistance and high current carrying capability enable it to efficiently switch loads in high power applications, reducing power consumption and improving system efficiency.
2. **Power Management**
- **Application Examples**: In power management systems such as DC-DC converters and power distribution modules, the CMB200N04-7-VB MOSFET can be used to handle high current loads, ensuring the stability and efficiency of the power supply. Its high current capability allows for use in compact power management designs.
3. **Motor Drive**
- **Application Examples**: The CMB200N04-7-VB has a wide range of applications in motor drive systems such as electric vehicle drive modules and industrial motor controllers. Its dual N-channel configuration provides good high-side and low-side switch control capabilities, suitable for high-current motor drive needs.
4. **LED drive**
- **Application examples**: In high-power LED drive circuits, CMB200N04-7-VB can be used for efficient switch control to ensure stable brightness and long life of the LED. Its low on-resistance and high current handling capability make it an ideal choice for high-power LED applications.
5. **Battery management**
- **Application examples**: This MOSFET is also suitable for high-power switches in battery management systems, such as battery protection and load switches. Its high current capability can effectively manage the battery's charge and discharge process and protect the battery from overcurrent damage.
With its low on-resistance and high current handling capability, the CMB200N04-7-VB MOSFET provides an efficient and reliable solution for a variety of high-power and high-current application scenarios.
1. **High Power Switching**
- **Application Examples**: The CMB200N04-7-VB MOSFET is ideal for high power switching applications such as power converters and motor drive modules. Its low on-resistance and high current carrying capability enable it to efficiently switch loads in high power applications, reducing power consumption and improving system efficiency.
2. **Power Management**
- **Application Examples**: In power management systems such as DC-DC converters and power distribution modules, the CMB200N04-7-VB MOSFET can be used to handle high current loads, ensuring the stability and efficiency of the power supply. Its high current capability allows for use in compact power management designs.
3. **Motor Drive**
- **Application Examples**: The CMB200N04-7-VB has a wide range of applications in motor drive systems such as electric vehicle drive modules and industrial motor controllers. Its dual N-channel configuration provides good high-side and low-side switch control capabilities, suitable for high-current motor drive needs.
4. **LED drive**
- **Application examples**: In high-power LED drive circuits, CMB200N04-7-VB can be used for efficient switch control to ensure stable brightness and long life of the LED. Its low on-resistance and high current handling capability make it an ideal choice for high-power LED applications.
5. **Battery management**
- **Application examples**: This MOSFET is also suitable for high-power switches in battery management systems, such as battery protection and load switches. Its high current capability can effectively manage the battery's charge and discharge process and protect the battery from overcurrent damage.
With its low on-resistance and high current handling capability, the CMB200N04-7-VB MOSFET provides an efficient and reliable solution for a variety of high-power and high-current application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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