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CMB150N04-VB Product details
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CMB150N04-VB MOSFET Product Introduction
**CMB150N04-VB** is a high-performance N-Channel MOSFET in TO263 package, designed for high current and high-efficiency applications. This MOSFET uses Trench technology, has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, and can handle higher current loads. Its threshold voltage (Vth) is 3V and provides very low RDS(ON) values, suitable for high-efficiency power management and switching applications.
**CMB150N04-VB** is a high-performance N-Channel MOSFET in TO263 package, designed for high current and high-efficiency applications. This MOSFET uses Trench technology, has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, and can handle higher current loads. Its threshold voltage (Vth) is 3V and provides very low RDS(ON) values, suitable for high-efficiency power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
CMB150N04-VB MOSFET Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 40V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **RDS(ON)**:
- 1.68mΩ @ VGS = 4.5V
- 1.4mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 280A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 40V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **RDS(ON)**:
- 1.68mΩ @ VGS = 4.5V
- 1.4mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 280A
- **Technology**: Trench
Domain and module applications：
Application Examples of CMB150N04-VB MOSFET
1. **High Power Switch**:
- In high power switching applications, CMB150N04-VB MOSFET can be used as a switching element to handle high current loads. Its low RDS(ON) and high current handling capability make it ideal for power switching and high-efficiency circuit designs, such as high power inverters and power supply systems.
2. **Power Management**:
- In power management circuits, such as DC-DC converters and power conditioning modules, this MOSFET provides efficient switching performance and low on-resistance to optimize power conversion and power distribution, improving overall system efficiency.
3. **EV Battery Management**:
- For EV battery management systems, CMB150N04-VB can provide efficient current switching and control functions to ensure the safety and stability of the battery pack. Its high current handling capability is suitable for high current charging and discharging applications.
4. **Motor Drive**:
- In motor drive circuits, this MOSFET provides stable current control for high current motor drive systems such as industrial motors and power tools. Its low on-resistance helps reduce power consumption and heat generation, improving system efficiency.
5. **Lighting System**:
- In high power LED lighting systems, CMB150N04-VB can be used as a current control and switching element to ensure consistent brightness of LED lighting and efficient operation of the system through its low RDS(ON) and high current capability.
By taking full advantage of the CMB150N04-VB's advanced trench technology and excellent electrical performance, designers can achieve excellent performance and reliability in a variety of high current, high efficiency applications.
1. **High Power Switch**:
- In high power switching applications, CMB150N04-VB MOSFET can be used as a switching element to handle high current loads. Its low RDS(ON) and high current handling capability make it ideal for power switching and high-efficiency circuit designs, such as high power inverters and power supply systems.
2. **Power Management**:
- In power management circuits, such as DC-DC converters and power conditioning modules, this MOSFET provides efficient switching performance and low on-resistance to optimize power conversion and power distribution, improving overall system efficiency.
3. **EV Battery Management**:
- For EV battery management systems, CMB150N04-VB can provide efficient current switching and control functions to ensure the safety and stability of the battery pack. Its high current handling capability is suitable for high current charging and discharging applications.
4. **Motor Drive**:
- In motor drive circuits, this MOSFET provides stable current control for high current motor drive systems such as industrial motors and power tools. Its low on-resistance helps reduce power consumption and heat generation, improving system efficiency.
5. **Lighting System**:
- In high power LED lighting systems, CMB150N04-VB can be used as a current control and switching element to ensure consistent brightness of LED lighting and efficient operation of the system through its low RDS(ON) and high current capability.
By taking full advantage of the CMB150N04-VB's advanced trench technology and excellent electrical performance, designers can achieve excellent performance and reliability in a variety of high current, high efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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