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CJPF10N65-VB Product details
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CJPF10N65-VB MOSFET Product Introduction
**CJPF10N65-VB** is a high voltage N-Channel MOSFET in TO220F package, designed for various high voltage applications. This MOSFET adopts Plannar technology, has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and can handle higher voltage loads. Its threshold voltage (Vth) is 3.5V, providing switching performance suitable for high voltage operation. The low RDS(ON) value makes it suitable for high-efficiency and high-reliability circuits.
**CJPF10N65-VB** is a high voltage N-Channel MOSFET in TO220F package, designed for various high voltage applications. This MOSFET adopts Plannar technology, has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and can handle higher voltage loads. Its threshold voltage (Vth) is 3.5V, providing switching performance suitable for high voltage operation. The low RDS(ON) value makes it suitable for high-efficiency and high-reliability circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
CJPF10N65-VB MOSFET Detailed parameter description
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **RDS(ON)**: 830mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 10A
- **Technology**: Plannar
- **Package**: TO220F
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **RDS(ON)**: 830mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 10A
- **Technology**: Plannar
Domain and module applications：
Application Examples of CJPF10N65-VB MOSFET
1. **Switching Power Supply**:
- In a switching power supply (SMPS), the CJPF10N65-VB MOSFET can be used as an efficient switching element. Its high drain-source voltage (VDS) and low RDS(ON) characteristics ensure efficient energy conversion and low power consumption, thereby improving the overall efficiency and reliability of the power supply.
2. **Lighting System**:
- In a high-voltage LED drive circuit, this MOSFET can be used to drive and control LED lamps, achieving efficient current control and better brightness consistency through its high-voltage handling capability and low on-resistance.
3. **Inverter**:
- In a solar or wind inverter, the CJPF10N65-VB is able to handle high voltages and provide stable switching performance, thereby ensuring efficient conversion and management of energy. This helps to improve the performance and efficiency of the inverter and ensure stable power output.
4. **Electric Vehicle Charger**:
- For electric vehicle chargers and high-voltage charging piles, CJPF10N65-VB MOSFET can provide efficient current control and switching performance to ensure the safety and efficiency of the charging process while adapting to a variety of charging modes and load conditions.
5. **Industrial Power**:
- In industrial power supplies and high-voltage power control systems, this MOSFET provides reliable high-voltage switching functions and efficient power management, suitable for industrial application scenarios requiring high voltage and high reliability.
By making full use of the advanced Plannar technology and optimized electrical characteristics of CJPF10N65-VB, designers can achieve high-efficiency and high-reliability electronic systems in a variety of high-voltage applications.
1. **Switching Power Supply**:
- In a switching power supply (SMPS), the CJPF10N65-VB MOSFET can be used as an efficient switching element. Its high drain-source voltage (VDS) and low RDS(ON) characteristics ensure efficient energy conversion and low power consumption, thereby improving the overall efficiency and reliability of the power supply.
2. **Lighting System**:
- In a high-voltage LED drive circuit, this MOSFET can be used to drive and control LED lamps, achieving efficient current control and better brightness consistency through its high-voltage handling capability and low on-resistance.
3. **Inverter**:
- In a solar or wind inverter, the CJPF10N65-VB is able to handle high voltages and provide stable switching performance, thereby ensuring efficient conversion and management of energy. This helps to improve the performance and efficiency of the inverter and ensure stable power output.
4. **Electric Vehicle Charger**:
- For electric vehicle chargers and high-voltage charging piles, CJPF10N65-VB MOSFET can provide efficient current control and switching performance to ensure the safety and efficiency of the charging process while adapting to a variety of charging modes and load conditions.
5. **Industrial Power**:
- In industrial power supplies and high-voltage power control systems, this MOSFET provides reliable high-voltage switching functions and efficient power management, suitable for industrial application scenarios requiring high voltage and high reliability.
By making full use of the advanced Plannar technology and optimized electrical characteristics of CJPF10N65-VB, designers can achieve high-efficiency and high-reliability electronic systems in a variety of high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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