CJD01N60-VB Product details
Product introduction:
CJD01N60-VB is a high voltage N-channel MOSFET in TO251 package. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. At a gate-source voltage of 10V, its on-resistance (RDS(ON)) is 4300mΩ and its maximum drain current (ID) is 2A. CJD01N60-VB uses planar technology to provide stability and reliability in high voltage environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
1. **Package**
- **Type**: TO251
2. **Configuration**
- **Type**: Single N-channel
3. **Electrical parameters**
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
4. **On-resistance**
- **RDS(ON) @ VGS=10V**: 4300mΩ
5. **Current**
- **Maximum drain current (ID)**: 2A
6. **Technology**
- **Manufacturing process**: Plannar technology
Domain and module applications:
1. **High Voltage Power Supply**
- **Application Examples**: CJD01N60-VB MOSFET is suitable for high voltage power management, such as high voltage DC-DC converters and power adapters. Its 650V drain-source voltage capability allows stable operation in high voltage environments, suitable for power conversion applications with high voltage input.
2. **Power Inverter**
- **Application Examples**: In power inverter applications, such as solar inverters and wind inverters, CJD01N60-VB MOSFET can be used as a switching element. Its high voltage withstand capability and relatively high on-resistance make it suitable for high voltage power conversion.
3. **Industrial Control**
- **Application Examples**: In industrial control systems, CJD01N60-VB MOSFET can be used in motor drives and switch control modules. Although its on-resistance is high, it can still provide reliable switching performance in low current and high voltage environments.
4. **Battery protection**
- **Application examples**: CJD01N60-VB MOSFET is suitable for battery protection circuits, such as overvoltage protection and overcurrent protection. Its high voltage handling capability can effectively protect batteries and other electronic components from high voltage damage.
5. **High voltage switch**
- **Application examples**: CJD01N60-VB MOSFET is also suitable for high voltage switching applications, such as power switches and load switches. Its high voltage tolerance enables it to remain stable in high voltage switching operations, ensuring system reliability.
With its high voltage tolerance and planar technology, CJD01N60-VB MOSFET provides a reliable switching solution in high voltage applications, suitable for a variety of application scenarios that require high voltage stability and reliability.
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