CHT170PT-VB Product details
Product introduction:
**CHT170PT-VB** is a high-efficiency single N-channel MOSFET in a compact SOT23-3 package. With a drain-source voltage (VDS) of 60V and a maximum gate-source voltage (VGS) of ±20V, this MOSFET is suitable for low and medium voltage electronic applications. Its gate threshold voltage (Vth) is 1.7V, and it can be turned on stably at a lower gate voltage. CHT170PT-VB uses advanced trench technology and has a relatively high on-resistance (RDS(ON)), which is 3100mΩ at VGS=4.5V and 2800mΩ at VGS=10V. Its maximum drain current (ID) is 0.3A, which is particularly suitable for switching and control functions in low current, high voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications:
The design features of the **CHT170PT-VB** make it suitable for a variety of low-power electronic applications. Here are some specific application examples:
1. **Portable devices**: In portable devices such as smartphones, wireless headsets, and portable sensors, the CHT170PT-VB is ideally suited as a power management and control switch due to its small package and low power consumption, helping to improve the energy efficiency of the device and extend battery life.
2. **Low-power switching circuits**: This MOSFET is suitable for low-power switching circuits, such as small circuit boards for battery power. In these applications, the CHT170PT-VB can provide stable switching performance and sufficient current handling capabilities despite its high on-resistance.
3. **Signal switch**: In signal switching applications, the CHT170PT-VB can be used as a switching element in the signal path, such as in analog signal processing and signal conditioning circuits. Its low gate threshold voltage and high VDS capability enable it to effectively control the on and off state of the signal.
4. **Consumer Electronics**: In consumer electronics such as remote controls, home appliances, and toys, the CHT170PT-VB can be used as a control power switch or load switch. Its compact package and stable performance make it suitable for a variety of low-power and miniaturized applications.
5. **Low-Power Power Protection**: In low-power power protection circuits, the CHT170PT-VB can be used to protect circuits from overcurrent or overvoltage, providing stable switching and protection functions.
From the above application examples, it can be seen that the **CHT170PT-VB** performs stably in switching applications that handle low current and high voltage, and is suitable for a variety of electronic devices that require miniaturization and high efficiency.
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