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CHM630PAPT-VB Product details

Product introduction:

1. Product introduction of CHM630PAPT-VB model



CHM630PAPT-VB is a high-voltage single N-channel power MOSFET in TO252 package. This MOSFET has a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, and adopts advanced trench technology. Its gate threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 245mΩ at VGS=10V, and the maximum drain current (ID) is 10A. This MOSFET is designed for high-voltage switching and control applications, and can provide stable performance and efficient power management in high-voltage environments.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 200V 3V 10A 245mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 200V 3V 10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 200V 3V 10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. Detailed parameter description of CHM630PAPT-VB model



| Parameter| Value| Unit|

| ---------- | ---------------- | ------- |

| Package| TO252 | |

| Configuration| Single N-channel| |

| Drain-source voltage (VDS) | 200 | V |

| Gate-source voltage (VGS) | ±20 | V |

| Gate threshold voltage (Vth) | 3 | V |

| On-resistance (RDS(ON)) @VGS=10V | 245 | mΩ |

| Drain current (ID) | 10 | A |

| Technology| Trench | |



Domain and module applications:

3. Application fields and modules of CHM630PAPT-VB



The high voltage and high current capabilities of CHM630PAPT-VB make it widely used in multiple fields and modules:



1. **High voltage power management**: This MOSFET is suitable for high voltage power management systems such as power converters and power adapters. Its high drain-source voltage capability of 200V can handle switching and control tasks in high voltage applications, ensuring the stability and reliability of the system.



2. **Inverters and converters**: In high voltage inverters (such as solar inverters) and power converters, CHM630PAPT-VB can provide stable switching performance and handle high voltage and high power conversion tasks. Its high withstand voltage characteristics help improve the efficiency and safety of the inverter.



3. **Electric vehicle charging system**: In electric vehicle chargers and charging stations, this MOSFET can handle the switching operation during high voltage charging. Its high voltage tolerance and stable performance are suitable for high voltage battery charging systems, ensuring safe and efficient charging.



4. **Industrial control systems**: In industrial automation and control systems, the CHM630PAPT-VB can be used to handle high voltage control signals and switching tasks, such as high voltage switchgear and electric actuators. Its high voltage capability and reliability are suitable for various industrial applications, providing stable performance.



5. **High power LED driver**: In high power LED drive circuits, this MOSFET can effectively control high voltage LED lamp groups, ensuring stable light output and long-term reliability of the system.



With its high voltage tolerance and stable switching performance, the CHM630PAPT-VB is an ideal choice for high voltage applications and high power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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