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CEU830G-VB Product details
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CEU830G-VB MOSFET Product Introduction
CEU830G-VB is a high voltage single N-channel MOSFET in TO252 package, designed for high voltage applications. The MOSFET has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. At a gate-source voltage of 10V, the on-resistance (RDS(ON)) is 1000mΩ and the maximum drain current (ID) is 5A. CEU830G-VB uses advanced SJ_Multi-EPI technology, which enables it to exhibit excellent performance and reliability in high voltage and high current applications.
CEU830G-VB is a high voltage single N-channel MOSFET in TO252 package, designed for high voltage applications. The MOSFET has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. At a gate-source voltage of 10V, the on-resistance (RDS(ON)) is 1000mΩ and the maximum drain current (ID) is 5A. CEU830G-VB uses advanced SJ_Multi-EPI technology, which enables it to exhibit excellent performance and reliability in high voltage and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
CEU830G-VB MOSFET Detailed parameter description
1. **Package**
- **Type**: TO252
2. **Configuration**
- **Type**: Single N-channel
3. **Electrical parameters**
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
4. **On-resistance**
- **RDS(ON) @ VGS=10V**: 1000mΩ
5. **Current**
- **Maximum drain current (ID)**: 5A
6. **Technology**
- **Manufacturing process**: SJ_Multi-EPI technology
1. **Package**
- **Type**: TO252
2. **Configuration**
- **Type**: Single N-channel
3. **Electrical parameters**
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
4. **On-resistance**
- **RDS(ON) @ VGS=10V**: 1000mΩ
5. **Current**
- **Maximum drain current (ID)**: 5A
6. **Technology**
- **Manufacturing process**: SJ_Multi-EPI technology
Domain and module applications：
CEU830G-VB MOSFET Applications and Modules
1. **High-voltage power supply**
- **Application examples**: The CEU830G-VB MOSFET is ideal for high-voltage power supply systems, such as high-voltage DC-DC converters and high-voltage power adapters. The 650V drain-source voltage allows it to operate stably in high-voltage environments, while its higher on-resistance still provides reliable performance in medium-current applications.
2. **Motor drive**
- **Application examples**: In high-voltage motor drive systems, the CEU830G-VB can be used in electric vehicles or industrial motor control systems. It can withstand high voltages and provide stable switching operations when the motor is started or running, ensuring high efficiency and reliability of the system.
3. **Power inverter**
- **Application examples**: In power inverter applications, such as photovoltaic inverters and wind inverters, the CEU830G-VB MOSFET can be used as a switching element. Its high voltage capability and good conduction characteristics can effectively support the power conversion process of the inverter.
4. **Switching Power Supply**
- **Application Examples**: In high-voltage switching power supply (SMPS) systems, CEU830G-VB MOSFET is suitable for high-voltage switching operations, such as high-voltage AC-DC converters and DC-DC converters. Its high voltage tolerance and reliable switching performance make it an ideal choice for these applications.
5. **Electronic Protection**
- **Application Examples**: CEU830G-VB MOSFET can also be used in electronic protection circuits such as overvoltage protection and overcurrent protection modules. Its high voltage capability enables it to effectively protect other electronic components from high voltage shocks.
With its high voltage tolerance and reliable switching performance, CEU830G-VB MOSFET is widely used in various high-voltage and medium-current application scenarios, providing efficient power management and protection solutions.
1. **High-voltage power supply**
- **Application examples**: The CEU830G-VB MOSFET is ideal for high-voltage power supply systems, such as high-voltage DC-DC converters and high-voltage power adapters. The 650V drain-source voltage allows it to operate stably in high-voltage environments, while its higher on-resistance still provides reliable performance in medium-current applications.
2. **Motor drive**
- **Application examples**: In high-voltage motor drive systems, the CEU830G-VB can be used in electric vehicles or industrial motor control systems. It can withstand high voltages and provide stable switching operations when the motor is started or running, ensuring high efficiency and reliability of the system.
3. **Power inverter**
- **Application examples**: In power inverter applications, such as photovoltaic inverters and wind inverters, the CEU830G-VB MOSFET can be used as a switching element. Its high voltage capability and good conduction characteristics can effectively support the power conversion process of the inverter.
4. **Switching Power Supply**
- **Application Examples**: In high-voltage switching power supply (SMPS) systems, CEU830G-VB MOSFET is suitable for high-voltage switching operations, such as high-voltage AC-DC converters and DC-DC converters. Its high voltage tolerance and reliable switching performance make it an ideal choice for these applications.
5. **Electronic Protection**
- **Application Examples**: CEU830G-VB MOSFET can also be used in electronic protection circuits such as overvoltage protection and overcurrent protection modules. Its high voltage capability enables it to effectively protect other electronic components from high voltage shocks.
With its high voltage tolerance and reliable switching performance, CEU830G-VB MOSFET is widely used in various high-voltage and medium-current application scenarios, providing efficient power management and protection solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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