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CEU73A3G-VB Product details
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CEU73A3G-VB MOSFET Product Introduction
**CEU73A3G-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for efficient power management and switching applications. This MOSFET uses Trench technology with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V and it provides a low RDS(ON) value, making it suitable for applications requiring high efficiency and high current handling capabilities.
**CEU73A3G-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for efficient power management and switching applications. This MOSFET uses Trench technology with a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V and it provides a low RDS(ON) value, making it suitable for applications requiring high efficiency and high current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
CEU73A3G-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **RDS(ON)**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 80A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **RDS(ON)**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Application Examples of CEU73A3G-VB MOSFET
1. **Power Supply Circuit**:
- In power supply circuits, such as high-efficiency DC-DC converters, CEU73A3G-VB MOSFET can be used as a switching element to optimize power conversion efficiency and reduce power loss with its low RDS(ON) and high current capability.
2. **Motor Drive**:
- For motor drive applications, such as brushless DC motor (BLDC) drives, CEU73A3G-VB can efficiently handle large currents and ensure stable switching performance, thereby improving the reliability and efficiency of motor control systems.
3. **Battery Management System**:
- In battery management systems, especially circuits for battery protection and cell balancing, this MOSFET can provide effective switching control to ensure the safety and performance of the battery pack while reducing voltage drop and power consumption.
4. **Automotive Electronics**:
- In automotive electronic devices, such as electric power steering systems and other high-current circuits, CEU73A3G-VB provides reliable high current handling capabilities and low on-resistance, suitable for use as a high-side switch to improve system stability and efficiency.
5. **Power Management Module**:
- In power management modules, CEU73A3G-VB can be used for load switching and power distribution applications, and its high current capability and low RDS(ON) characteristics can effectively improve the overall performance and energy efficiency of the system.
By making full use of the advanced Trench technology and excellent electrical characteristics of CEU73A3G-VB, designers can achieve high-performance and high-reliability electronic systems in multiple fields and modules.
1. **Power Supply Circuit**:
- In power supply circuits, such as high-efficiency DC-DC converters, CEU73A3G-VB MOSFET can be used as a switching element to optimize power conversion efficiency and reduce power loss with its low RDS(ON) and high current capability.
2. **Motor Drive**:
- For motor drive applications, such as brushless DC motor (BLDC) drives, CEU73A3G-VB can efficiently handle large currents and ensure stable switching performance, thereby improving the reliability and efficiency of motor control systems.
3. **Battery Management System**:
- In battery management systems, especially circuits for battery protection and cell balancing, this MOSFET can provide effective switching control to ensure the safety and performance of the battery pack while reducing voltage drop and power consumption.
4. **Automotive Electronics**:
- In automotive electronic devices, such as electric power steering systems and other high-current circuits, CEU73A3G-VB provides reliable high current handling capabilities and low on-resistance, suitable for use as a high-side switch to improve system stability and efficiency.
5. **Power Management Module**:
- In power management modules, CEU73A3G-VB can be used for load switching and power distribution applications, and its high current capability and low RDS(ON) characteristics can effectively improve the overall performance and energy efficiency of the system.
By making full use of the advanced Trench technology and excellent electrical characteristics of CEU73A3G-VB, designers can achieve high-performance and high-reliability electronic systems in multiple fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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