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CEU730G-VB Product details
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1. Product introduction of CEU730G-VB model
CEU730G-VB is a high-voltage single N-channel power MOSFET in TO252 package. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and adopts advanced SJ_Multi-EPI technology. The gate threshold voltage (Vth) of CEU730G-VB is 3.5V, the on-resistance (RDS(ON)) is 1000mΩ at VGS=10V, and the maximum drain current (ID) is 5A. This MOSFET is designed to handle switching and control tasks in high-voltage applications and is suitable for various systems and modules that require high-voltage handling capabilities.
CEU730G-VB is a high-voltage single N-channel power MOSFET in TO252 package. This MOSFET has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and adopts advanced SJ_Multi-EPI technology. The gate threshold voltage (Vth) of CEU730G-VB is 3.5V, the on-resistance (RDS(ON)) is 1000mΩ at VGS=10V, and the maximum drain current (ID) is 5A. This MOSFET is designed to handle switching and control tasks in high-voltage applications and is suitable for various systems and modules that require high-voltage handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of CEU730G-VB model
| Parameter| Value| Unit|
| ---------- | ---------------- | ------- |
| Package| TO252 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 650 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Gate threshold voltage (Vth) | 3.5 | V |
| On-resistance (RDS(ON)) @VGS=10V | 1000 | mΩ |
| Drain current (ID) | 5 | A |
| Technology| SJ_Multi-EPI | |
| Parameter| Value| Unit|
| ---------- | ---------------- | ------- |
| Package| TO252 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 650 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Gate threshold voltage (Vth) | 3.5 | V |
| On-resistance (RDS(ON)) @VGS=10V | 1000 | mΩ |
| Drain current (ID) | 5 | A |
| Technology| SJ_Multi-EPI | |
Domain and module applications：
3. Application fields and modules of CEU730G-VB
The high voltage and high current capabilities of CEU730G-VB make it widely used in multiple fields and modules:
1. **High voltage power converter**: This MOSFET is suitable for high voltage power converters, such as industrial power modules and power adapters. Its high drain-source voltage capability of 650V enables it to handle switching and control tasks in high voltage applications, ensuring system stability and reliability.
2. **Inverter**: In solar inverters and other high voltage inverters, CEU730G-VB can provide stable switching performance and handle high voltage and high power conversion tasks. Its high withstand voltage characteristics help improve the efficiency and safety of the inverter.
3. **Electric vehicle charging system**: In electric vehicle charging stations and chargers, this MOSFET can handle the switching operation during high voltage charging. Its high voltage withstand capability and stable performance are suitable for high voltage battery charging systems.
4. **Industrial Automation and Control**: In industrial automation and control systems, CEU730G-VB can be used to handle high voltage control signals and switching tasks, such as electric actuators and high voltage switchgear. Its high voltage capability and reliability are suitable for various industrial applications.
5. **LED Drive Circuit**: In high power LED drive circuit, CEU730G-VB can effectively control high voltage LED lamp groups, ensuring stable light output and long-term reliability of the system.
With its high voltage tolerance and stable switching performance, CEU730G-VB is an ideal choice for high voltage applications and high power systems.
The high voltage and high current capabilities of CEU730G-VB make it widely used in multiple fields and modules:
1. **High voltage power converter**: This MOSFET is suitable for high voltage power converters, such as industrial power modules and power adapters. Its high drain-source voltage capability of 650V enables it to handle switching and control tasks in high voltage applications, ensuring system stability and reliability.
2. **Inverter**: In solar inverters and other high voltage inverters, CEU730G-VB can provide stable switching performance and handle high voltage and high power conversion tasks. Its high withstand voltage characteristics help improve the efficiency and safety of the inverter.
3. **Electric vehicle charging system**: In electric vehicle charging stations and chargers, this MOSFET can handle the switching operation during high voltage charging. Its high voltage withstand capability and stable performance are suitable for high voltage battery charging systems.
4. **Industrial Automation and Control**: In industrial automation and control systems, CEU730G-VB can be used to handle high voltage control signals and switching tasks, such as electric actuators and high voltage switchgear. Its high voltage capability and reliability are suitable for various industrial applications.
5. **LED Drive Circuit**: In high power LED drive circuit, CEU730G-VB can effectively control high voltage LED lamp groups, ensuring stable light output and long-term reliability of the system.
With its high voltage tolerance and stable switching performance, CEU730G-VB is an ideal choice for high voltage applications and high power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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