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CEU655-VB Product details
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CEU655-VB MOSFET Product Introduction
CEU655-VB is a high voltage single N-channel MOSFET in TO252 package. Its main features include 200V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and 3V threshold voltage (Vth). The device has an on-resistance (RDS(ON)) of 245mΩ (at VGS=10V) and a maximum drain current (ID) of 10A. CEU655-VB uses advanced trench technology and has excellent electrical performance and reliability, making it very suitable for applications that require high voltage tolerance and stability.
CEU655-VB is a high voltage single N-channel MOSFET in TO252 package. Its main features include 200V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and 3V threshold voltage (Vth). The device has an on-resistance (RDS(ON)) of 245mΩ (at VGS=10V) and a maximum drain current (ID) of 10A. CEU655-VB uses advanced trench technology and has excellent electrical performance and reliability, making it very suitable for applications that require high voltage tolerance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
CEU655-VB MOSFET Detailed parameter description
1. **Package**
- **Type**: TO252
2. **Configuration**
- **Type**: Single N-channel
3. **Electrical parameters**
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
4. **On-resistance**
- **RDS(ON) @ VGS=10V**: 245mΩ
5. **Current**
- **Maximum drain current (ID)**: 10A
6. **Technology**
- **Manufacturing process**: Trench technology
1. **Package**
- **Type**: TO252
2. **Configuration**
- **Type**: Single N-channel
3. **Electrical parameters**
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
4. **On-resistance**
- **RDS(ON) @ VGS=10V**: 245mΩ
5. **Current**
- **Maximum drain current (ID)**: 10A
6. **Technology**
- **Manufacturing process**: Trench technology
Domain and module applications：
CEU655-VB MOSFET Applications and Modules
1. **High-voltage power management**
- **Application examples**: In high-voltage power management systems, CEU655-VB MOSFET is often used in high-voltage DC-DC converters and power adapters. Its 200V drain-source voltage capability enables it to handle high voltage inputs, ensuring system stability and high efficiency.
2. **Motor drive**
- **Application examples**: In motor drive modules, such as those used in electric vehicles or industrial motor control systems, CEU655-VB provides reliable high voltage and medium current handling capabilities. It can stably control current and voltage changes during motor startup and operation.
3. **Power amplifier**
- **Application examples**: In power amplifier designs, such as high-power radio frequency (RF) amplifiers, CEU655-VB MOSFET can be used as a switching element or power stage component. Its high voltage tolerance and low on-resistance help improve the performance and power output of the amplifier.
4. **Switching Power Supply**
- **Application Examples**: In switching power supply (SMPS) systems, CEU655-VB MOSFET is suitable for high voltage switching operations such as AC-DC converters and high voltage DC-DC converters. Its high voltage rating and good conduction characteristics contribute to efficient energy conversion and management.
5. **Electronic Protection**
- **Application Examples**: CEU655-VB MOSFET can also be used in electronic protection circuits, such as overvoltage protection and overcurrent protection modules. Its high drain-source voltage capability and medium current handling capability can effectively protect other electronic components from damage by high voltage and high current.
With its superior high voltage and medium current handling capabilities, as well as low on-resistance, CEU655-VB MOSFET has become an important component in high voltage power management and power control applications.
1. **High-voltage power management**
- **Application examples**: In high-voltage power management systems, CEU655-VB MOSFET is often used in high-voltage DC-DC converters and power adapters. Its 200V drain-source voltage capability enables it to handle high voltage inputs, ensuring system stability and high efficiency.
2. **Motor drive**
- **Application examples**: In motor drive modules, such as those used in electric vehicles or industrial motor control systems, CEU655-VB provides reliable high voltage and medium current handling capabilities. It can stably control current and voltage changes during motor startup and operation.
3. **Power amplifier**
- **Application examples**: In power amplifier designs, such as high-power radio frequency (RF) amplifiers, CEU655-VB MOSFET can be used as a switching element or power stage component. Its high voltage tolerance and low on-resistance help improve the performance and power output of the amplifier.
4. **Switching Power Supply**
- **Application Examples**: In switching power supply (SMPS) systems, CEU655-VB MOSFET is suitable for high voltage switching operations such as AC-DC converters and high voltage DC-DC converters. Its high voltage rating and good conduction characteristics contribute to efficient energy conversion and management.
5. **Electronic Protection**
- **Application Examples**: CEU655-VB MOSFET can also be used in electronic protection circuits, such as overvoltage protection and overcurrent protection modules. Its high drain-source voltage capability and medium current handling capability can effectively protect other electronic components from damage by high voltage and high current.
With its superior high voltage and medium current handling capabilities, as well as low on-resistance, CEU655-VB MOSFET has become an important component in high voltage power management and power control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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