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CEU6355-VB Product details
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CEU6355-VB MOSFET Product Introduction
**CEU6355-VB** is a high-performance P-Channel MOSFET in TO252 package, designed for efficient power management and switching applications. This MOSFET uses Trench technology, has a drain-source voltage (VDS) of -60V and a gate-source voltage (VGS) of ±20V, and performs well in a variety of high-power environments. Its threshold voltage (Vth) is -1.7V, and the low RDS(ON) value makes the device excellent in applications that require precise control of current flow and minimize power consumption.
**CEU6355-VB** is a high-performance P-Channel MOSFET in TO252 package, designed for efficient power management and switching applications. This MOSFET uses Trench technology, has a drain-source voltage (VDS) of -60V and a gate-source voltage (VGS) of ±20V, and performs well in a variety of high-power environments. Its threshold voltage (Vth) is -1.7V, and the low RDS(ON) value makes the device excellent in applications that require precise control of current flow and minimize power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
CEU6355-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **RDS(ON)**:
- 25mΩ @ VGS = 4.5V
- 20mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: -50A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **RDS(ON)**:
- 25mΩ @ VGS = 4.5V
- 20mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: -50A
- **Technology**: Trench
Domain and module applications：
Application Examples of CEU6355-VB MOSFET
1. **Power Management Circuits**:
- In power management systems, such as DC-DC converters and power supply systems, CEU6355-VB can be used as a high-side switch to efficiently manage and control power distribution with its low RDS(ON) and high current handling capability.
2. **Battery Protection**:
- In battery management systems, especially Li-ion battery packs, this MOSFET provides reliable over-current protection and switching functions to ensure safe and efficient operation by minimizing voltage drop and power loss.
3. **Automotive Applications**:
- In automotive electronics, CEU6355-VB is suitable for load switching, motor drives, and other high current applications, especially when a P-Channel MOSFET is required as a high-side switch to provide stable performance under different load conditions.
4. **Power Sequence Control**:
- This MOSFET is suitable for use in power sequence control circuits to handle the high current required during the power start and stop phases to ensure stable and reliable operation of the power supply.
5. **Communication Equipment**:
- In communication equipment, the CEU6355-VB MOSFET can be used in high current switching applications such as power amplifiers and signal processing circuits, where its efficient switching and low on-resistance help improve signal integrity and device performance.
By leveraging the CEU6355-VB's advanced trench technology and optimized electrical characteristics, designers can improve the performance, efficiency and reliability of various electronic systems in multiple application areas.
1. **Power Management Circuits**:
- In power management systems, such as DC-DC converters and power supply systems, CEU6355-VB can be used as a high-side switch to efficiently manage and control power distribution with its low RDS(ON) and high current handling capability.
2. **Battery Protection**:
- In battery management systems, especially Li-ion battery packs, this MOSFET provides reliable over-current protection and switching functions to ensure safe and efficient operation by minimizing voltage drop and power loss.
3. **Automotive Applications**:
- In automotive electronics, CEU6355-VB is suitable for load switching, motor drives, and other high current applications, especially when a P-Channel MOSFET is required as a high-side switch to provide stable performance under different load conditions.
4. **Power Sequence Control**:
- This MOSFET is suitable for use in power sequence control circuits to handle the high current required during the power start and stop phases to ensure stable and reliable operation of the power supply.
5. **Communication Equipment**:
- In communication equipment, the CEU6355-VB MOSFET can be used in high current switching applications such as power amplifiers and signal processing circuits, where its efficient switching and low on-resistance help improve signal integrity and device performance.
By leveraging the CEU6355-VB's advanced trench technology and optimized electrical characteristics, designers can improve the performance, efficiency and reliability of various electronic systems in multiple application areas.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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