中文
English
CEU55N10-VB Product details
Back to previous pageProduct introduction：
“CEU55N10-VB MOSFET Product Overview
**CEU55N10-VB** is a high-performance N-channel MOSFET designed for efficient power management and switching applications. It is packaged in a compact TO252 package and uses Trench technology to improve performance. With a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for a variety of high-power applications. The device has a low threshold voltage (Vth) of 2.5V and provides excellent RDS(ON) characteristics, making it an ideal choice for applications that require high efficiency and reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | 8.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of CEU55N10-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **RDS(ON)**:
- 10.5mΩ @ VGS = 4.5V
- 8.5mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 85A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **RDS(ON)**:
- 10.5mΩ @ VGS = 4.5V
- 8.5mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Application Examples of CEU55N10-VB MOSFET
1. **Power Supply Unit**:
- In a Switch Mode Power Supply (SMPS), the CEU55N10-VB MOSFET can be used as a switching element due to its high current handling capability and low on-resistance, which improves efficiency and thermal performance.
2. **Motor Driver**:
- This MOSFET is suitable for motor control circuits, including brushless DC (BLDC) motor drives, where efficient switching and high current capability are critical for performance and reliability.
3. **Automotive Applications**:
- The CEU55N10-VB is well suited for automotive applications such as electric power steering, electronic control units (ECUs), and battery management systems (BMSs), where robustness and reliability are critical.
4. **DC-DC Converters**:
- In DC-DC converter circuits, this MOSFET can be used as the main switching device, reducing power losses and improving overall performance due to its low RDS(ON) and high efficiency.
5. **LED Lighting**:
- For LED lighting systems, the CEU55N10-VB can be used in driver circuits to effectively control and regulate the power supplied to the LEDs, ensuring consistent and reliable lighting performance.
By leveraging the advanced trench technology and robust electrical characteristics of the CEU55N10-VB MOSFET, designers can improve the performance and efficiency of a wide range of electronic systems across multiple industries. ”
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
