CEU5175-VB Product details
Product introduction:
CEU5175-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high-efficiency switching and current control applications. The MOSFET has a maximum drain-source voltage (VDS) of -60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of -1.7V. Its on-resistance (RDS(ON)) is 20mΩ at VGS=-10V, and it can handle a continuous drain current of up to -50A. CEU5175-VB, which uses Trench technology, provides extremely low on-resistance and high switching efficiency, and is suitable for applications requiring high current and low loss.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
| Parameters| Specifications|
|-----------------|----------------------------|
| Package type| TO252 |
| Configuration| Single P-channel|
| Drain-source voltage (VDS) | -60V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -1.7V |
| On-resistance (RDS(ON)) | 25mΩ @ VGS=-4.5V |
| | 20mΩ @ VGS=-10V |
| Continuous drain current (ID) | -50A |
| Technology| Trench |
Domain and module applications:
1. **Power management system**:
CEU5175-VB can be used as a load switch or synchronous rectifier in power management systems. Its low on-resistance (RDS(ON)) is only 20mΩ at VGS=-10V, which helps reduce switching losses and improve system efficiency. It is suitable for battery management systems, power adapters and other power management modules.
2. **Motor drive control**:
In motor control applications, CEU5175-VB can efficiently drive DC motors and stepper motors. Its drain current handling capability of up to -50A and low on-resistance make it suitable for various motor drive circuits, improving the performance and reliability of motor control systems.
3. **Load switch**:
CEU5175-VB can be used as a load switch to control the connection and disconnection of various loads. Its high current handling capability and low on-resistance ensure efficient and stable load control in industrial control and home appliance applications.
4. **DC-DC Converter**:
This MOSFET can be used as a high-efficiency switching element in DC-DC converter designs. Its low on-resistance and high current handling capability improve the efficiency and performance of DC-DC converters and is suitable for buck and boost converters.
5. **Consumer Electronics**:
CEU5175-VB is suitable for switching and load control applications in consumer electronics such as smartphones, tablets and laptops. Its reliable high current handling capability and low loss characteristics ensure stable and efficient performance in these devices.
In summary, CEU5175-VB provides excellent switching performance and high efficiency for power management, motor control, load switching, DC-DC converters and consumer electronics through its high current handling capability, low on-resistance and efficient Trench technology.
Technical support:
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