CEU3423-VB Product details
Product introduction:
CEU3423-VB is a high-performance P-channel MOSFET in TO252 package, designed for low-voltage applications. This MOSFET has a maximum drain-source voltage (VDS) of -30V, suitable for use in low-voltage circuits. Its gate-source voltage (VGS) range is ±20V, and the threshold voltage (Vth) is -1.7V. The on-resistance (RDS(ON)) of CEU3423-VB is 33mΩ at VGS=-10V, and it can handle a continuous drain current of up to -38A. This MOSFET using Trench technology provides lower on-resistance and higher switching efficiency, and is suitable for a variety of applications requiring high current and low conduction loss.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
| Parameters| Specifications|
|-----------------|----------------------------|
| Package type| TO252 |
| Configuration| Single P-channel|
| Drain-source voltage (VDS) | -30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -1.7V |
| On-resistance (RDS(ON)) | 46mΩ @ VGS=-4.5V |
| | 33mΩ @ VGS=-10V |
| Continuous drain current (ID) | -38A |
| Technology| Trench |
Domain and module applications:
1. **Power management system**:
In power management systems, CEU3423-VB can be used as a switching element for load switches or synchronous rectifiers. Its low on-resistance (RDS(ON)) is 33mΩ at VGS=-10V, which helps reduce switching losses and improve overall efficiency. It is suitable for power management modules such as battery management systems and power adapters.
2. **Motor control circuit**:
This MOSFET is suitable for a variety of motor control applications, including DC motor and stepper motor drive circuits. It can withstand drain currents up to -38A and provides a low on-resistance at VGS=-10V, enabling it to efficiently drive motors and improve the performance of motor control systems.
3. **Load switch**:
In load switch applications, CEU3423-VB can be used as a switching element to control the on and off of loads. Its low on-resistance and high current carrying capacity enable it to effectively control a variety of loads, suitable for industrial control and home appliance applications.
4. **DC-DC Converter**:
In DC-DC converter design, this MOSFET can be used as a switching element. Its high current handling capability and low on-resistance help improve the efficiency and performance of DC-DC converters, suitable for buck and boost converters.
5. **Consumer Electronics**:
CEU3423-VB is also suitable for switching and load control applications in consumer electronics. Its high current handling capability and reliability enable it to provide stable performance in devices such as smartphones, tablets and laptops.
In general, CEU3423-VB provides superior switching performance and high efficiency for applications such as power management systems, motor control, load switches, DC-DC converters and consumer electronics through its high current handling capability, low on-resistance and efficient Trench technology.
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