CEU3070-VB Product details
Product introduction:
CEU3070-VB is a high-performance N-channel MOSFET in a TO252 package designed for high current and low resistance applications. It supports a drain-source voltage (VDS) of up to 30V and is capable of providing a drain current (ID) of up to 80A. Using Trench technology, this MOSFET has an extremely low on-resistance (RDS(ON)) of 5mΩ at VGS=10V and 6mΩ at VGS=4.5V. This makes the CEU3070-VB an excellent performer in applications requiring high efficiency and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology type**: Trench
Domain and module applications:
1. **Power management**:
CEU3070-VB is very suitable for use as a high-efficiency switching element in power management systems. Its extremely low on-resistance enables it to reduce power loss in power converters and DC-DC converters and improve the energy efficiency of the system. This makes it an ideal choice for high-performance power modules and power regulators.
2. **Motor drive**:
In motor drive applications, CEU3070-VB is capable of handling high current loads and is suitable for use as a switching element in motor drive circuits. Its high current capability and low on-resistance ensure stable operation and efficient control of the motor, and is suitable for stepper motors, DC motors, and brushless motor drive modules.
3. **Switching circuit**:
CEU3070-VB can provide efficient switching control in switching circuits. Its low on-resistance and high current handling capability make it suitable for high-frequency switching circuits and signal switches, reducing power loss and improving switching speed and system responsiveness.
4. **LED Driver**:
In LED driver circuits, CEU3070-VB is able to effectively drive high-power LEDs. Its low on-resistance ensures efficient current transfer and less power loss, thereby providing stable LED brightness, suitable for LED driver modules and lighting systems.
5. **Battery Management System**:
This MOSFET is suitable for battery protection and load switching in battery management systems. Its high current capability and low on-resistance can effectively manage the battery's charge and discharge process, prevent overcharge and overdischarge, and ensure the safety and stability of the battery system.
6. **Power Amplifier**:
CEU3070-VB also performs well in the design of power amplifiers. Its low on-resistance and high current capability enable it to handle high-power signals, reduce power loss, and improve the performance and efficiency of the amplifier.
CEU3070-VB is suitable for use in power management, motor drive, switching circuit, LED drive, battery management system and power amplifier due to its low on-resistance and high current handling capability. Its excellent performance enables it to provide efficient switching and control capabilities in various applications.
Technical support:
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