CEU3055L-VB Product details
Product introduction:
CEU3055L-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium and high voltage applications. This MOSFET has a maximum drain-source voltage (VDS) of 60V and is suitable for use in medium voltage circuits. Its gate-source voltage (VGS) range is ±20V and the threshold voltage (Vth) is 1.7V. The on-resistance (RDS(ON)) of CEU3055L-VB is 73mΩ at VGS=10V, and it can handle a continuous drain current of up to 18A. This MOSFET using Trench technology provides lower on-resistance and higher switching efficiency, and is suitable for a variety of applications requiring high current and low conduction losses.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameters| Specifications|
|-----------------|----------------------------|
| Package type| TO252 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 60V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 85mΩ @ VGS=4.5V |
| | 73mΩ @ VGS=10V |
| Continuous drain current (ID) | 18A |
| Technology| Trench |
Domain and module applications:
1. **Switching Power Supply (SMPS)**:
In switching power supply design, CEU3055L-VB can be used as a switching element for the main switch or synchronous rectifier. Its low on-resistance (RDS(ON)) is 73mΩ at VGS=10V, which helps reduce switching losses and improve overall efficiency. It is suitable for switching power supply modules such as AC-DC converters and DC-DC converters.
2. **Motor drive circuit**:
This MOSFET is suitable for a variety of motor drive applications, including DC motor and stepper motor drive circuits. It can withstand drain currents up to 18A and provides a low on-resistance at VGS=10V, enabling it to drive motors efficiently and improve the performance of motor control systems.
3. **LED driver**:
In LED drive circuits, CEU3055L-VB can be used as a switching element to regulate the current of LEDs. Its low on-resistance and high current carrying capacity enable it to effectively control the brightness of LEDs, making it suitable for high-power LED applications.
4. **Power Amplifier**:
In power amplifier design, this MOSFET can be used as a switching switch and a load switch. Its high current handling capability and low on-resistance help improve the efficiency and performance of power amplifiers, and are suitable for audio power amplifiers and RF power amplifiers.
5. **Automotive Electronics**:
CEU3055L-VB is also suitable for switching and load control applications in automotive electronic systems. Its high current handling capability and reliability enable it to provide stable performance in areas such as automotive battery management, power systems, and automotive lighting control.
In general, CEU3055L-VB provides superior switching performance and high efficiency for applications such as switching power supplies, motor drives, LED drivers, power amplifiers, and automotive electronics through its high current handling capability, low on-resistance, and efficient Trench technology.
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