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CEU16N10-VB Product details
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CEU16N10-VB MOSFET Product Introduction
**Model:** CEU16N10-VB
**Package:** TO252
**Configuration:** Single N-channel
**Technology:** Trench
CEU16N10-VB is a high-performance single N-channel MOSFET packaged in TO252. This MOSFET uses advanced trench technology and is designed for high voltage and high current applications, providing stable performance and low on-resistance. Its design goal is to achieve efficient energy transfer and switch control, and is suitable for various power management and current control circuits.
**Model:** CEU16N10-VB
**Package:** TO252
**Configuration:** Single N-channel
**Technology:** Trench
CEU16N10-VB is a high-performance single N-channel MOSFET packaged in TO252. This MOSFET uses advanced trench technology and is designed for high voltage and high current applications, providing stable performance and low on-resistance. Its design goal is to achieve efficient energy transfer and switch control, and is suitable for various power management and current control circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **VDS (drain-source voltage): ** 100V
The maximum drain-source voltage is 100V, which enables CEU16N10-VB to work stably in a high voltage environment and is suitable for high voltage circuit applications.
- **VGS (gate-source voltage): ** ±20V
The maximum gate-source voltage is ±20V, ensuring that the MOSFET operates stably in a wider gate drive voltage range.
- **Vth (threshold voltage): ** 1.8V
The threshold voltage is 1.8V, which means that the MOSFET can be turned on at a lower gate voltage, which is suitable for applications that require a low turn-on voltage.
- **RDS(ON) (drain-source on-resistance): **
- 114mΩ @ VGS=10V
The on-resistance is 114mΩ when the gate-source voltage is 10V, providing a lower on-resistance, reducing energy loss and improving system efficiency.
- **ID (Continuous Drain Current):** 15A
The maximum continuous drain current is 15A, which enables the CEU16N10-VB to handle medium to high current loads and is suitable for a variety of application scenarios with current requirements.
- **VDS (drain-source voltage): ** 100V
The maximum drain-source voltage is 100V, which enables CEU16N10-VB to work stably in a high voltage environment and is suitable for high voltage circuit applications.
- **VGS (gate-source voltage): ** ±20V
The maximum gate-source voltage is ±20V, ensuring that the MOSFET operates stably in a wider gate drive voltage range.
- **Vth (threshold voltage): ** 1.8V
The threshold voltage is 1.8V, which means that the MOSFET can be turned on at a lower gate voltage, which is suitable for applications that require a low turn-on voltage.
- **RDS(ON) (drain-source on-resistance): **
- 114mΩ @ VGS=10V
The on-resistance is 114mΩ when the gate-source voltage is 10V, providing a lower on-resistance, reducing energy loss and improving system efficiency.
- **ID (Continuous Drain Current):** 15A
The maximum continuous drain current is 15A, which enables the CEU16N10-VB to handle medium to high current loads and is suitable for a variety of application scenarios with current requirements.
Domain and module applications：
Application Examples
The characteristics of CEU16N10-VB MOSFET make it widely used in many fields. The following are some typical application scenarios:
1. **Power Management:**
- In power management systems, such as switching power supplies and DC-DC converters, the high voltage handling capability and low on-resistance of CEU16N10-VB make it suitable as a power switch, providing efficient power conversion and stable power output.
2. **Motor Drive:**
- In motor control systems, this MOSFET can be used as a load switch and current regulator, suitable for efficient switching control of motor drive circuits, ensuring efficient and stable operation of the motor.
3. **Power Switch:**
- In various power switching applications, such as power switching and protection circuits, the high current handling capability and low on-resistance of CEU16N10-VB provide reliable switching performance and effective power control.
4. **Automotive Electronics:**
- In automotive electronic systems, such as battery management and power distribution, the high voltage and current capabilities of CEU16N10-VB are suitable for switching and controlling various automotive electrical devices.
5. **Consumer Electronics:**
- In consumer electronic products, such as TVs, computers, and audio equipment, CEU16N10-VB can be used for power management and switching control, providing efficient energy management and stable performance.
CEU16N10-VB MOSFET provides excellent performance for high voltage applications through its high current carrying capability and low on-resistance, which can meet the needs of various complex circuits and loads.
The characteristics of CEU16N10-VB MOSFET make it widely used in many fields. The following are some typical application scenarios:
1. **Power Management:**
- In power management systems, such as switching power supplies and DC-DC converters, the high voltage handling capability and low on-resistance of CEU16N10-VB make it suitable as a power switch, providing efficient power conversion and stable power output.
2. **Motor Drive:**
- In motor control systems, this MOSFET can be used as a load switch and current regulator, suitable for efficient switching control of motor drive circuits, ensuring efficient and stable operation of the motor.
3. **Power Switch:**
- In various power switching applications, such as power switching and protection circuits, the high current handling capability and low on-resistance of CEU16N10-VB provide reliable switching performance and effective power control.
4. **Automotive Electronics:**
- In automotive electronic systems, such as battery management and power distribution, the high voltage and current capabilities of CEU16N10-VB are suitable for switching and controlling various automotive electrical devices.
5. **Consumer Electronics:**
- In consumer electronic products, such as TVs, computers, and audio equipment, CEU16N10-VB can be used for power management and switching control, providing efficient energy management and stable performance.
CEU16N10-VB MOSFET provides excellent performance for high voltage applications through its high current carrying capability and low on-resistance, which can meet the needs of various complex circuits and loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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