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CEU14G04-VB Product details
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CEU14G04-VB MOSFET Product Introduction
CEU14G04-VB is a high-performance N-Channel MOSFET in TO252 package, designed for applications requiring high current and low on-resistance. It has a maximum drain-source voltage (VDS) of 40V and can handle drain currents up to 120A. This MOSFET uses Trench technology to achieve extremely low on-resistance (RDS(ON)) and excellent switching performance. With an on-resistance of 1.6mΩ at a VGS of 10V, it is suitable for high-efficiency current switching and power conversion applications.
CEU14G04-VB is a high-performance N-Channel MOSFET in TO252 package, designed for applications requiring high current and low on-resistance. It has a maximum drain-source voltage (VDS) of 40V and can handle drain currents up to 120A. This MOSFET uses Trench technology to achieve extremely low on-resistance (RDS(ON)) and excellent switching performance. With an on-resistance of 1.6mΩ at a VGS of 10V, it is suitable for high-efficiency current switching and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
CEU14G04-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-state resistance (RDS(ON))**:
- 1.6mΩ @ VGS = 10V
- 3mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-state resistance (RDS(ON))**:
- 1.6mΩ @ VGS = 10V
- 3mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **High Current Switch**:
The CEU14G04-VB is suitable for switching applications that require high current handling capabilities, such as power management circuits and high power supply modules. This MOSFET can efficiently handle currents up to 120A while maintaining extremely low on-resistance, making it suitable for use in applications with higher currents.
2. **DC-DC Converter**:
In DC-DC converters, the low RDS(ON) and high current handling capability of the CEU14G04-VB make it an ideal switching element, especially in high power conversion modules such as computer power supplies and automotive power management systems.
3. **Power Amplifier**:
In power amplifiers and driver circuits, the low on-resistance and high current capability of the CEU14G04-VB can improve system efficiency, reduce power consumption, and enhance the overall performance of the system, making it suitable for use in audio amplifiers or radio frequency (RF) power amplifiers.
These applications require MOSFETs with high current handling capabilities and low power consumption. The CEU14G04-VB is designed to meet these needs, making it an ideal choice for high-efficiency, high-performance circuits.
1. **High Current Switch**:
The CEU14G04-VB is suitable for switching applications that require high current handling capabilities, such as power management circuits and high power supply modules. This MOSFET can efficiently handle currents up to 120A while maintaining extremely low on-resistance, making it suitable for use in applications with higher currents.
2. **DC-DC Converter**:
In DC-DC converters, the low RDS(ON) and high current handling capability of the CEU14G04-VB make it an ideal switching element, especially in high power conversion modules such as computer power supplies and automotive power management systems.
3. **Power Amplifier**:
In power amplifiers and driver circuits, the low on-resistance and high current capability of the CEU14G04-VB can improve system efficiency, reduce power consumption, and enhance the overall performance of the system, making it suitable for use in audio amplifiers or radio frequency (RF) power amplifiers.
These applications require MOSFETs with high current handling capabilities and low power consumption. The CEU14G04-VB is designed to meet these needs, making it an ideal choice for high-efficiency, high-performance circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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