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CEU05P03-VB Product details
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CEU05P03-VB MOSFET Product Introduction
**Model: ** CEU05P03-VB
**Package: ** TO252
**Configuration: ** Single P-channel
**Technology: ** Trench
CEU05P03-VB is a single P-channel MOSFET packaged in TO252, designed for high-efficiency switching and low on-resistance applications. Using trench technology, this MOSFET provides excellent performance and is suitable for circuit designs that require high current handling capabilities and stable current control.
**Model: ** CEU05P03-VB
**Package: ** TO252
**Configuration: ** Single P-channel
**Technology: ** Trench
CEU05P03-VB is a single P-channel MOSFET packaged in TO252, designed for high-efficiency switching and low on-resistance applications. Using trench technology, this MOSFET provides excellent performance and is suitable for circuit designs that require high current handling capabilities and stable current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **VDS (drain-source voltage): ** -30V
The maximum drain-source voltage is -30V, which is suitable for applications that require negative voltage processing and can work stably at this voltage.
- **VGS (gate-source voltage): ** ±20V
The maximum gate-source voltage is ±20V, ensuring that the MOSFET works stably in a wide gate drive voltage range and provides good switching performance.
- **Vth (threshold voltage): ** -1.7V
The threshold voltage is -1.7V, which is suitable for applications with low threshold requirements and ensures that the MOSFET is quickly turned on at the required voltage.
- **RDS(ON)（Drain-Source On-Resistance）:**
- 46mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
Under different gate-source voltages, the on-resistance is 46mΩ and 33mΩ respectively, providing lower on-resistance, reducing energy loss and improving system efficiency.
- **ID（Continuous Drain Current）:** -38A
The maximum continuous drain current is -38A, which can handle larger negative current loads and is suitable for applications with high current requirements.
- **VDS (drain-source voltage): ** -30V
The maximum drain-source voltage is -30V, which is suitable for applications that require negative voltage processing and can work stably at this voltage.
- **VGS (gate-source voltage): ** ±20V
The maximum gate-source voltage is ±20V, ensuring that the MOSFET works stably in a wide gate drive voltage range and provides good switching performance.
- **Vth (threshold voltage): ** -1.7V
The threshold voltage is -1.7V, which is suitable for applications with low threshold requirements and ensures that the MOSFET is quickly turned on at the required voltage.
- **RDS(ON)（Drain-Source On-Resistance）:**
- 46mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
Under different gate-source voltages, the on-resistance is 46mΩ and 33mΩ respectively, providing lower on-resistance, reducing energy loss and improving system efficiency.
- **ID（Continuous Drain Current）:** -38A
The maximum continuous drain current is -38A, which can handle larger negative current loads and is suitable for applications with high current requirements.
Domain and module applications：
Application Examples
The characteristics of CEU05P03-VB MOSFET make it widely used in many fields. The following are some typical application scenarios:
1. **Power Management:**
- In power management systems, the low on-resistance and high current handling capability of CEU05P03-VB make it suitable for power switches, DC-DC converters and battery management systems, providing efficient power conversion and stable power supply.
2. **Motor Control:**
- In motor drivers, this MOSFET can be used as a load switch and current regulation, suitable for motor control and drive circuits, ensuring efficient and stable operation of the motor.
3. **Power Switch:**
- In various power switching applications, such as current switching and protection circuits, the high current capability and low on-resistance of CEU05P03-VB provide reliable switching performance and effective power control.
4. **Automotive Electronics:**
- In automotive electronic systems, such as battery protection and power distribution systems, the high current handling capability and low on-resistance of CEU05P03-VB are suitable for switching and controlling various automotive electrical devices.
5. **Consumer Electronics:**
- In consumer electronics products such as smartphones, tablets and notebooks, this MOSFET can be used for power switching and current control, providing efficient energy management and long-term stable performance.
With its high current handling capability and low on-resistance, CEU05P03-VB MOSFET provides an excellent solution for a variety of high current applications, meeting the needs of complex circuits and loads.
The characteristics of CEU05P03-VB MOSFET make it widely used in many fields. The following are some typical application scenarios:
1. **Power Management:**
- In power management systems, the low on-resistance and high current handling capability of CEU05P03-VB make it suitable for power switches, DC-DC converters and battery management systems, providing efficient power conversion and stable power supply.
2. **Motor Control:**
- In motor drivers, this MOSFET can be used as a load switch and current regulation, suitable for motor control and drive circuits, ensuring efficient and stable operation of the motor.
3. **Power Switch:**
- In various power switching applications, such as current switching and protection circuits, the high current capability and low on-resistance of CEU05P03-VB provide reliable switching performance and effective power control.
4. **Automotive Electronics:**
- In automotive electronic systems, such as battery protection and power distribution systems, the high current handling capability and low on-resistance of CEU05P03-VB are suitable for switching and controlling various automotive electrical devices.
5. **Consumer Electronics:**
- In consumer electronics products such as smartphones, tablets and notebooks, this MOSFET can be used for power switching and current control, providing efficient energy management and long-term stable performance.
With its high current handling capability and low on-resistance, CEU05P03-VB MOSFET provides an excellent solution for a variety of high current applications, meeting the needs of complex circuits and loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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