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CEU04N7G-VB Product details
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CEU04N7G-VB MOSFET Product Introduction
CEU04N7G-VB is a high-voltage N-Channel MOSFET with a TO252 package type, suitable for electronic circuits that require high voltage and high durability. Its maximum drain-source voltage (VDS) is 700V and it can handle a drain current of up to 2A. This MOSFET uses SJ_Multi-EPI technology and has high thermal stability and voltage resistance. Its gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3.5V, and the on-state resistance (RDS(ON)) is 2400mΩ (VGS=10V). This device is suitable for high-voltage switching and power conversion applications.
CEU04N7G-VB is a high-voltage N-Channel MOSFET with a TO252 package type, suitable for electronic circuits that require high voltage and high durability. Its maximum drain-source voltage (VDS) is 700V and it can handle a drain current of up to 2A. This MOSFET uses SJ_Multi-EPI technology and has high thermal stability and voltage resistance. Its gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3.5V, and the on-state resistance (RDS(ON)) is 2400mΩ (VGS=10V). This device is suitable for high-voltage switching and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
CEU04N7G-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-state resistance (RDS(ON))**: 2400mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-state resistance (RDS(ON))**: 2400mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High voltage switching**:
CEU04N7G-VB is suitable for high voltage switching circuits and can provide reliable switching performance in the switching control of high voltage power supplies. For example, this MOSFET can be used in high voltage power management modules in power electronic equipment and industrial power switches.
2. **Power conversion**:
In high voltage DC-DC converters, CEU04N7G-VB can be used in power switching applications such as isolated DC-DC converters to provide stable power conversion and high efficiency.
3. **Protection circuit**:
Due to its high drain-source voltage tolerance and durability, CEU04N7G-VB is also suitable for high voltage protection circuits, such as overvoltage protection and voltage stabilization circuits, to prevent equipment from being damaged by excessive voltage.
These applications require MOSFETs to have high withstand voltage, stable switching characteristics and reliable current handling capabilities, and CEU04N7G-VB meets these requirements.
1. **High voltage switching**:
CEU04N7G-VB is suitable for high voltage switching circuits and can provide reliable switching performance in the switching control of high voltage power supplies. For example, this MOSFET can be used in high voltage power management modules in power electronic equipment and industrial power switches.
2. **Power conversion**:
In high voltage DC-DC converters, CEU04N7G-VB can be used in power switching applications such as isolated DC-DC converters to provide stable power conversion and high efficiency.
3. **Protection circuit**:
Due to its high drain-source voltage tolerance and durability, CEU04N7G-VB is also suitable for high voltage protection circuits, such as overvoltage protection and voltage stabilization circuits, to prevent equipment from being damaged by excessive voltage.
These applications require MOSFETs to have high withstand voltage, stable switching characteristics and reliable current handling capabilities, and CEU04N7G-VB meets these requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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