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CEU03N8-VB Product details

Product introduction:

Product Introduction



CEU03N8-VB is a high voltage N-channel MOSFET in TO252 package. It supports drain-source voltage (VDS) up to 800V, suitable for applications that require high voltage tolerance. This MOSFET uses SJ_Multi-EPI technology, which helps to improve the voltage tolerance and stability of the device. The drain current (ID) of CEU03N8-VB is 2A, which is suitable for switching applications in high voltage environments. Although its on-resistance (RDS(ON)) is high at 2600mΩ@VGS=10V, its main advantage lies in its high voltage tolerance, which is suitable for high voltage power supplies and protection circuits.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 800V 3.5V 2A 2600mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 800V 3.5V 2A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 800V 3.5V 2A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description



- **Package type**: TO252

- **Configuration**: Single N-channel

- **Drain-source voltage (VDS)**: 800V

- **Gate-source voltage (VGS)**: ±30V

- **Threshold voltage (Vth)**: 3.5V

- **On-resistance (RDS(ON))**:

- 2600mΩ @ VGS = 10V

- **Drain current (ID)**: 2A

- **Technology type**: SJ_Multi-EPI



Domain and module applications:

Application fields and module examples



1. **High-voltage power management**: CEU03N8-VB performs well in high-voltage power management systems, especially for high-voltage power conversion and protection circuits. In these applications, its high drain-source voltage (VDS) ensures stable operation of the system in high-voltage environments and avoids breakdown or failure.



2. **Power converter**: This MOSFET is suitable for use as a switching element in power converters, especially in designs that require high-voltage isolation. Its high voltage withstand capability enables stable operation during power conversion, thereby improving system reliability.



3. **Motor drive**: In motor drives, CEU03N8-VB is able to handle current loads in high-voltage environments. Despite the high on-resistance, its high voltage withstand characteristics are suitable for use in high-voltage drivers to ensure the stability of motor drive systems.



4. **Inverter applications**: This MOSFET can be used in inverters, especially those inverter designs that require high voltage withstand capability. It is able to handle high voltage DC power, convert it to AC, and provide the necessary switching control.



5. **Power Protection**: CEU03N8-VB can be used in power protection circuits to prevent overvoltage or other electrical faults. This high voltage MOSFET can protect the circuit from damage under high voltage conditions and ensure the safety of the equipment.



6. **High Voltage Switching Circuit**: CEU03N8-VB can be used as a switching element in various high voltage switching circuits. Its high withstand voltage characteristics make it stable in high voltage switching applications and effectively switch high voltage loads.



The high voltage tolerance of CEU03N8-VB makes it widely used in power management, power conversion, motor drive, inverter, power protection and high voltage switching circuits. Although its on-resistance is relatively high, its high voltage capability is still an important advantage in many high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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