CET456N-VB Product details
Product introduction:
**Model: ** CET456N-VB
**Package: ** SOT223
**Configuration: ** Single N-channel
**Technology: ** Trench
CET456N-VB is a single N-channel MOSFET in SOT223 package, suitable for applications requiring efficient switching and low on-resistance. Its trench technology provides excellent switching performance and low on-resistance, making it excellent in power management and various electronic devices.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
- **VDS (drain-source voltage): ** 60V
The maximum drain-source voltage is 60V, which is suitable for medium and high voltage applications, and can work stably in high voltage environments to ensure system reliability.
- **VGS (gate-source voltage): ** ±20V
The maximum gate-source voltage is ±20V, which provides good gate drive stability and flexibility to meet various circuit design requirements.
- **Vth (threshold voltage): ** 1.7V
The threshold voltage is 1.7V, which is suitable for applications with low threshold voltage requirements, ensuring that the MOSFET can be turned on quickly when needed.
- **RDS(ON)(Drain-Source On-Resistance):**
- 33mΩ @ VGS=4.5V
- 28mΩ @ VGS=10V
Under different gate-source voltages, the on-resistance is 33mΩ and 28mΩ respectively, providing lower on-resistance, reducing energy loss and improving system efficiency.
- **ID(Continuous Drain Current):** 7A
The maximum continuous drain current is 7A, which can handle higher current loads and is suitable for applications that require larger current handling capabilities.
Domain and module applications:
The medium-high voltage and high current handling capabilities of CET456N-VB MOSFET make it excellent in many application areas. The following are some typical application areas:
1. **Power Management:**
- In power management systems, the high drain-source voltage and low on-resistance of CET456N-VB make it very suitable for DC-DC converters and switching power supplies, providing efficient power conversion and low energy consumption.
2. **Motor Control:**
- In motor control applications, this MOSFET is able to handle high currents and is suitable for motor drivers and control circuits to ensure stable operation and efficient energy transfer of the motor.
3. **Lighting Systems:**
- In lighting systems, CET456N-VB is suitable for LED drivers and dimming circuits, providing stable current control and efficient energy utilization.
4. **Consumer Electronics:**
- In consumer electronics, such as smartphones, tablets, and laptops, this MOSFET can be used for battery management and power control, providing efficient power management solutions.
5. **Industrial Control:**
- In industrial control systems, the high voltage and current handling capabilities of CET456N-VB are suitable for power switching and control applications in various industrial equipment, ensuring efficient operation and stability of the system.
With its medium-high voltage and high current handling capabilities, CET456N-VB MOSFET is an ideal choice in power management and control systems, providing a reliable solution for various medium-high voltage applications.
Technical support:
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